Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer View Full Text


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Article Info

DATE

2014-05

AUTHORS

M. M. Rozhavskaya, W. V. Lundin, E. Yu. Lundina, A. V. Sakharov, S. I. Troshkov, A. N. Smirnov, V. Yu. Davydov

ABSTRACT

The possibilities of a new method of growing gallium nitride nano- and microwire crystals using continuous titanium films with a thickness of 10–30 nm during growth are described. It is shown that this method can provide growth of high-quality GaN nanowire crystals at an extremely high rate of about 10 μm/min. More... »

PAGES

372-374

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785014050125

DOI

http://dx.doi.org/10.1134/s1063785014050125

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1023407865


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