Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions View Full Text


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Article Info

DATE

2014-05

AUTHORS

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, M. A. Yagovkina, A. F. Tsatsulnikov

ABSTRACT

Conversion of the near-surface regions of InGaN into GaN during growth interruption has been studied. It has been established that the process exhibits saturation in time, develops at a depth below 2 nm, and proceeds in a similar way in the presence and absence of hydrogen, although hydrogen supply significantly accelerates the conversion process. InGaN/GaN heterostructures obtained with interruption of growth exhibit an additional photoluminescence line with a longer wavelength as compared to that for an otherwise analogous continuous InGaN layer. It is established that growth interruption in a hydrogen-free atmosphere is more favorable for obtaining light-emitting structures for the green spectral range. More... »

PAGES

365-368

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785014050095

DOI

http://dx.doi.org/10.1134/s1063785014050095

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1023000639


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