Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded p-n junctions View Full Text


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Article Info

DATE

2014-04

AUTHORS

V. I. Brylevskii, I. A. Smirnova, P. B. Rodin, I. V. Grekhov

ABSTRACT

The phenomenon of delayed avalanche breakdown in high-voltage silicon diodes has been studied for the first time using an experimental setup with specially designed resistive coupler as a part of a high-quality matched measuring tract. Three types of diode structures with identical geometric parameters and close stationary breakdown voltages within 1.1–1.3 kV have been studied, including p+-n-n+ structures with abrupt p-n junctions and two different p+-p-n-n+ structures with graded p-n junctions. Upon switching of all structures, a voltage step with an amplitude above 1 kV and a rise time of ∼100 ps at a breakdown voltage of about 2 kV is formed in the load. However, switching to a state with low (∼150 V) residual voltage has been observed only in the structures with an abrupt p-n junction, while the voltage in structures with graded junctions only decreased to a level of ∼1 kV, which is close to the stationary breakdown voltage. More... »

PAGES

357-360

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785014040166

DOI

http://dx.doi.org/10.1134/s1063785014040166

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006971237


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