Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-09-28

AUTHORS

A. M. Nadtochiy, N. V. Kryzhanovskaya, M. V. Maximov, A. E. Zhukov, E. I. Moiseev, M. M. Kulagina, K. A. Vashanova, Yu. M. Zadiranov, I. S. Mukhin, E. M. Arakcheeva, D. Livshits, A. A. Lipovskii

ABSTRACT

Microdisc resonators based on InAs/GaAs quantum dots separated from a GaAs substrate by selective etching and fixed to a silicon substrate by epoxy glue are studied using luminescence spectroscopy. A disc resonator 6 μm in diameter exhibits quasi-single-mode laser generation at a temperature of 78 K with a threshold power of 320 μW and λ/Δλ ∼ 27000. More... »

PAGES

830-833

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785013090216

DOI

http://dx.doi.org/10.1134/s1063785013090216

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1052489226


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