Preparation of a strip structure for quantum-cascade lasers View Full Text


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Article Info

DATE

2013-09-28

AUTHORS

V. V. Mamutin, N. D. Il’inskaya, B. V. Pushnyi, R. N. Levin, Yu. M. Shernyakov

ABSTRACT

A method for overgrowing laser stripe structures with high-ohmic indium phosphide to bound the domain of current flow and to improve heat dissipation is presented. Overgrowing was performed using metal-organic chemical-vapor deposition. It is shown that the method makes it possible to obtain high-quality epitaxial layers and defectless overgrowth boundaries without special processing of the structures after photolithography. All the InP layers were n-conductive, the specific resistance was ρ ∼ 5 × 104 Ω cm, and the carrier concentration was n ∼ 5 × 1010 cm−3. The characteristics of the grown InP layers permit one to obtain high-quality quantum-cascade lasers. More... »

PAGES

811-813

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785013090198

DOI

http://dx.doi.org/10.1134/s1063785013090198

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1017096503


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