Cooled photodiodes based on a type-II single p-InAsSbP/n-InAs heterostructure View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-09-28

AUTHORS

N. D. Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevost’yanov, N. M. Stus’

ABSTRACT

Analysis of current-voltage and spectral characteristics of photodiodes based on a single p-InAsSbP/n-InAs heterostructure formed on a heavily doped n+-InAs substrate (n+ ∼ 1018 cm−3) is presented. It is shown that, at low temperatures (77 < T < 190 K), the generation-recombination current flow mechanism typical of p-i-n diodes dominates. Expected parameters of the photodiode that can be obtained using these heterostructures are presented. More... »

PAGES

818-821

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785013090174

DOI

http://dx.doi.org/10.1134/s1063785013090174

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1037800875


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