Increasing output power of LEDs (λ = 1.7–2.4 μm) by changing directions of reflected light fluxes in GaSb/GaInAsSb/GaAlAsSb heterostructures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-02

AUTHORS

A. V. Zolotukhin, V. V. Sherstnev, K. A. Savel’eva, E. A. Grebenshchikova, O. Yu. Serebrennikova, N. D. Il’inskaya, S. I. Slobozhanyuk, E. V. Ivanov, Yu. P. Yakovlev

ABSTRACT

It is demonstrated, using the example of light-emitting diodes (LEDs) based n-GaSb/n-GaIn-AsSb/p-GaAlAsSb heterostructures, that the formation of a curvilinear reflecting surface consisting of hemispherical etch pits on the rear side of an LED chip leads to an increase in the output radiation power by a factor of 1.9–2 in the entire wavelength interval studied (λ = 1.7–2.4 μm) as compared to the LED chip design with a continuous absorbing ohmic contact. This increase in the LED efficiency is related to a change in the directions of reflected light fluxes upon reflection from the hemispherical etch pits. More... »

PAGES

203-205

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785013020272

DOI

http://dx.doi.org/10.1134/s1063785013020272

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1012549496


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