Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-01

AUTHORS

I. I. Izhnin, G. V. Savitskii, E. I. Fitsych, S. A. Dvoretsky, N. N. Mikhailov, V. S. Varavin, K. D. Mynbaev

ABSTRACT

We have studied the relaxation of electrical properties in radiation-damaged layers formed during ion-beam milling (IBM) of cadmium mercury telluride (CdHgTe) solid solutions. It is established that the initial concentration of donor centers formed due to radiation-induced defects and the dynamics of their decomposition in the course of aging (relaxation) are determined by the composition of the solid solution. The mobility of charge carriers in radiation-damaged CdHgTe layers upon relaxation also depends on the solid solution composition. More... »

PAGES

16-19

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785013010136

DOI

http://dx.doi.org/10.1134/s1063785013010136

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1028612902


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