Increasing the degradation resistance of semi-insulating gallium arsenide crystals by plasma processing View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-11

AUTHORS

N. I. Klyui, A. I. Liptuga, V. B. Lozinskii, A. P. Oksanich, V. A. Terban, F. V. Fomovskii

ABSTRACT

The effect of processing in hydrogen plasma on the resistance of semi-insulating GaAs crystals to degradation under the action of high-frequency (HF) electromagnetic fields and heat treatments has been studied by measuring the room-temperature IR transmission spectra of samples in a 5–15 μm wavelength range. It is established that the transmission of plasma-treated crystals, in contrast to untreated samples, does not decrease under subsequent HF irradiation and even increases in comparison to the initial transmission. A mechanism is proposed that explains the influence of processing in hydrogen plasma on the degradation resistance and optical transmission of semi-insulating GaAs crystals in the IR spectral range. This mechanism takes into account the relaxation of internal mechanical stresses in a near-surface layer of a crystal as a result of the plasma processing. More... »

PAGES

1016-1019

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785012110235

DOI

http://dx.doi.org/10.1134/s1063785012110235

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031371435


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