Annealing of radiation-compensated silicon carbide View Full Text


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Article Info

DATE

2012-10

AUTHORS

A. A. Lebedev, E. V. Bogdanova, M. V. Grigor’eva, S. P. Lebedev, V. V. Kozlovski

ABSTRACT

This Letter is devoted to investigation of conductivity reduction in radiation-compensated epitaxial layers of various polytypes of silicon carbide of p-type conduction. It is shown that radiation-induced compensation of SiC is retained after annealing ≤1000°C. The almost complete conductivity reduction occurs at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of silicon carbide polytype and the starting doping level of the epitaxial layer. The found temperatures of complete annealing considerably exceed working temperatures of SiC-based devices. More... »

PAGES

910-912

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785012100069

DOI

http://dx.doi.org/10.1134/s1063785012100069

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1030212783


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