Ontology type: schema:ScholarlyArticle
2012-09
AUTHORSV. V. Zabrodsky, V. P. Belik, P. N. Aruev, B. Ya. Ber, S. V. Bobashev, M. V. Petrenko, V. L. Sukhanov
ABSTRACTSilicon photodiodes have been tested for resistance to vacuum-ultraviolet radiation at 121.6 nm. The responsivities of the p-n and n-p photodiodes under study were found to degrade by tens of percent at a VUV radiation dose on the order of tens of mJ/cm2. The effect of reversible photocurrent relaxation has been observed in detectors based on n-p structures. More... »
PAGES812-815
http://scigraph.springernature.com/pub.10.1134/s1063785012090143
DOIhttp://dx.doi.org/10.1134/s1063785012090143
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