A study of vacuum-ultraviolet stability of silicon photodiodes View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-09

AUTHORS

V. V. Zabrodsky, V. P. Belik, P. N. Aruev, B. Ya. Ber, S. V. Bobashev, M. V. Petrenko, V. L. Sukhanov

ABSTRACT

Silicon photodiodes have been tested for resistance to vacuum-ultraviolet radiation at 121.6 nm. The responsivities of the p-n and n-p photodiodes under study were found to degrade by tens of percent at a VUV radiation dose on the order of tens of mJ/cm2. The effect of reversible photocurrent relaxation has been observed in detectors based on n-p structures. More... »

PAGES

812-815

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785012090143

DOI

http://dx.doi.org/10.1134/s1063785012090143

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1018758563


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