Molecular-beam epitaxy of (Ga,Mn)As crystal nanowires on surface GaAs(100) View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-09

AUTHORS

A. D. Bouravleuv, G. O. Abdrashitov, G. E. Cirlin

ABSTRACT

Arrays of (Ga,Mn)As crystal nanowires on a GaAs (100) substrate were first obtained using molecular-beam epitaxy at 485°C. From the diffraction patterns of the reflected fast electrons, it was found that crystal nanowires are formed in this system in a cubic crystallographic phase.

PAGES

816-818

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785012090040

DOI

http://dx.doi.org/10.1134/s1063785012090040

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1034259119


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