Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-05

AUTHORS

M. G. Mynbaeva, A. E. Nikolaev, A. A. Sitnikova, R. V. Zolotareva, K. D. Mynbaev

ABSTRACT

Results of experiments on the homoepitaxial growth of gallium nitride (GaN) on porous GaN substrates with nanostructured volume are reported. A mechanism that can be used to exclude the dislocations of substrate from the sources of threading dislocations in homoepitaxial layers is described for the first time.

PAGES

412-414

Journal

TITLE

Technical Physics Letters

ISSUE

5

VOLUME

38

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785012050082

DOI

http://dx.doi.org/10.1134/s1063785012050082

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1002697277


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