Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-05

AUTHORS

M. G. Mynbaeva, A. E. Nikolaev, A. A. Sitnikova, R. V. Zolotareva, K. D. Mynbaev

ABSTRACT

Results of experiments on the homoepitaxial growth of gallium nitride (GaN) on porous GaN substrates with nanostructured volume are reported. A mechanism that can be used to exclude the dislocations of substrate from the sources of threading dislocations in homoepitaxial layers is described for the first time.

PAGES

412-414

Journal

TITLE

Technical Physics Letters

ISSUE

5

VOLUME

38

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785012050082

DOI

http://dx.doi.org/10.1134/s1063785012050082

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1002697277


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Perfect Crystals Co., 198205, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mynbaeva", 
        "givenName": "M. G.", 
        "id": "sg:person.07660667737.36", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07660667737.36"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Perfect Crystals Co., 198205, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nikolaev", 
        "givenName": "A. E.", 
        "id": "sg:person.010050311505.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010050311505.33"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Perfect Crystals Co., 198205, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sitnikova", 
        "givenName": "A. A.", 
        "id": "sg:person.015133024650.23", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015133024650.23"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Perfect Crystals Co., 198205, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zolotareva", 
        "givenName": "R. V.", 
        "id": "sg:person.015072116725.07", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015072116725.07"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Perfect Crystals Co., 198205, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mynbaev", 
        "givenName": "K. D.", 
        "id": "sg:person.010274772027.40", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010274772027.40"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1002/9780470751817.ch7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026821299"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.mechmat.2009.04.006", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1052748513"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1337628", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057696392"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1454187", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057708240"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.2136224", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057838982"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.4028/www.scientific.net/msf.264-268.1121", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1072107507"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.4028/www.scientific.net/msf.457-460.363", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1072117439"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2012-05", 
    "datePublishedReg": "2012-05-01", 
    "description": "Results of experiments on the homoepitaxial growth of gallium nitride (GaN) on porous GaN substrates with nanostructured volume are reported. A mechanism that can be used to exclude the dislocations of substrate from the sources of threading dislocations in homoepitaxial layers is described for the first time.", 
    "genre": "non_research_article", 
    "id": "sg:pub.10.1134/s1063785012050082", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "1063-7850", 
          "1090-6533"
        ], 
        "name": "Technical Physics Letters", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "5", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "38"
      }
    ], 
    "name": "Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates", 
    "pagination": "412-414", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "0cd78dde12d9aef95e3be4681bfb5dc3cf99b30b02587a812952b9c6177fa80f"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785012050082"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1002697277"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785012050082", 
      "https://app.dimensions.ai/details/publication/pub.1002697277"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T13:13", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8659_00000503.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134%2FS1063785012050082"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

111 TRIPLES      21 PREDICATES      34 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785012050082 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N99e97997907f45108edc5cdff16244a3
4 schema:citation https://doi.org/10.1002/9780470751817.ch7
5 https://doi.org/10.1016/j.mechmat.2009.04.006
6 https://doi.org/10.1063/1.1337628
7 https://doi.org/10.1063/1.1454187
8 https://doi.org/10.1063/1.2136224
9 https://doi.org/10.4028/www.scientific.net/msf.264-268.1121
10 https://doi.org/10.4028/www.scientific.net/msf.457-460.363
11 schema:datePublished 2012-05
12 schema:datePublishedReg 2012-05-01
13 schema:description Results of experiments on the homoepitaxial growth of gallium nitride (GaN) on porous GaN substrates with nanostructured volume are reported. A mechanism that can be used to exclude the dislocations of substrate from the sources of threading dislocations in homoepitaxial layers is described for the first time.
14 schema:genre non_research_article
15 schema:inLanguage en
16 schema:isAccessibleForFree false
17 schema:isPartOf N5cda7d7882ea41169967b2ec81a91455
18 N95c6b7c262a44a10af6c6e9d5775dc40
19 sg:journal.1136630
20 schema:name Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates
21 schema:pagination 412-414
22 schema:productId N23910584bf6d4be8b9045070101871cc
23 N3a312a328fac45a48d22c87b2d0ea69a
24 Ne2bf970a6691494a81fd10573865114b
25 schema:sameAs https://app.dimensions.ai/details/publication/pub.1002697277
26 https://doi.org/10.1134/s1063785012050082
27 schema:sdDatePublished 2019-04-10T13:13
28 schema:sdLicense https://scigraph.springernature.com/explorer/license/
29 schema:sdPublisher N341498c5762c450bb36d9cc4da8415be
30 schema:url http://link.springer.com/10.1134%2FS1063785012050082
31 sgo:license sg:explorer/license/
32 sgo:sdDataset articles
33 rdf:type schema:ScholarlyArticle
34 N0ec47aca9dcc41499b57be0b64f19cf9 rdf:first sg:person.015133024650.23
35 rdf:rest Nc54cd0c7c7a94f5cb525fbda033b4226
36 N23910584bf6d4be8b9045070101871cc schema:name dimensions_id
37 schema:value pub.1002697277
38 rdf:type schema:PropertyValue
39 N2429a0005312432d8f7a1cbf087e529c rdf:first sg:person.010050311505.33
40 rdf:rest N0ec47aca9dcc41499b57be0b64f19cf9
41 N341498c5762c450bb36d9cc4da8415be schema:name Springer Nature - SN SciGraph project
42 rdf:type schema:Organization
43 N3a312a328fac45a48d22c87b2d0ea69a schema:name doi
44 schema:value 10.1134/s1063785012050082
45 rdf:type schema:PropertyValue
46 N5cda7d7882ea41169967b2ec81a91455 schema:issueNumber 5
47 rdf:type schema:PublicationIssue
48 N8ad7cf5b640d424bb63af8f2c6103103 rdf:first sg:person.010274772027.40
49 rdf:rest rdf:nil
50 N95c6b7c262a44a10af6c6e9d5775dc40 schema:volumeNumber 38
51 rdf:type schema:PublicationVolume
52 N99e97997907f45108edc5cdff16244a3 rdf:first sg:person.07660667737.36
53 rdf:rest N2429a0005312432d8f7a1cbf087e529c
54 Nc54cd0c7c7a94f5cb525fbda033b4226 rdf:first sg:person.015072116725.07
55 rdf:rest N8ad7cf5b640d424bb63af8f2c6103103
56 Ne2bf970a6691494a81fd10573865114b schema:name readcube_id
57 schema:value 0cd78dde12d9aef95e3be4681bfb5dc3cf99b30b02587a812952b9c6177fa80f
58 rdf:type schema:PropertyValue
59 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
60 schema:name Engineering
61 rdf:type schema:DefinedTerm
62 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
63 schema:name Materials Engineering
64 rdf:type schema:DefinedTerm
65 sg:journal.1136630 schema:issn 1063-7850
66 1090-6533
67 schema:name Technical Physics Letters
68 rdf:type schema:Periodical
69 sg:person.010050311505.33 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
70 schema:familyName Nikolaev
71 schema:givenName A. E.
72 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010050311505.33
73 rdf:type schema:Person
74 sg:person.010274772027.40 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
75 schema:familyName Mynbaev
76 schema:givenName K. D.
77 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010274772027.40
78 rdf:type schema:Person
79 sg:person.015072116725.07 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
80 schema:familyName Zolotareva
81 schema:givenName R. V.
82 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015072116725.07
83 rdf:type schema:Person
84 sg:person.015133024650.23 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
85 schema:familyName Sitnikova
86 schema:givenName A. A.
87 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015133024650.23
88 rdf:type schema:Person
89 sg:person.07660667737.36 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
90 schema:familyName Mynbaeva
91 schema:givenName M. G.
92 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07660667737.36
93 rdf:type schema:Person
94 https://doi.org/10.1002/9780470751817.ch7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026821299
95 rdf:type schema:CreativeWork
96 https://doi.org/10.1016/j.mechmat.2009.04.006 schema:sameAs https://app.dimensions.ai/details/publication/pub.1052748513
97 rdf:type schema:CreativeWork
98 https://doi.org/10.1063/1.1337628 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057696392
99 rdf:type schema:CreativeWork
100 https://doi.org/10.1063/1.1454187 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057708240
101 rdf:type schema:CreativeWork
102 https://doi.org/10.1063/1.2136224 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057838982
103 rdf:type schema:CreativeWork
104 https://doi.org/10.4028/www.scientific.net/msf.264-268.1121 schema:sameAs https://app.dimensions.ai/details/publication/pub.1072107507
105 rdf:type schema:CreativeWork
106 https://doi.org/10.4028/www.scientific.net/msf.457-460.363 schema:sameAs https://app.dimensions.ai/details/publication/pub.1072117439
107 rdf:type schema:CreativeWork
108 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
109 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
110 Perfect Crystals Co., 198205, St. Petersburg, Russia
111 rdf:type schema:Organization
 




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