Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-05

AUTHORS

M. R. Ainbund, A. N. Alekseev, O. V. Alymov, V. N. Jmerik, L. V. Lapushkina, A. M. Mizerov, S. V. Ivanov, A. V. Pashuk, S. I. Petrov

ABSTRACT

Solar-blind UV photodetectors based on photocathodes are among the important applications of heterostructures based on group III metal nitride semiconductors. Related investigations are most frequently devoted to photocathodes with p-GaN active regions characterized by a long-wavelength sensitivity threshold at 360 nm. Since the detected radiation is mostly concentrated in the spectral range below 240–290 nm, corresponding displacement of the long-wavelength sensitivity threshold of photodetectors by using photocathodes with p-AlGaN active regions is a topical task. We present preliminary results on manufacturing photocathodes with a p-AlxGa1 − xN (x = 0.1 and 0.3) active region (possessing a long-wavelength sensitivity threshold at 330 and 300 nm, respectively). More... »

PAGES

439-442

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785012050033

DOI

http://dx.doi.org/10.1134/s1063785012050033

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1018764358


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