The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-04

AUTHORS

M. S. Buyalo, A. A. Gorbazevich, A. Yu. Egorov, I. M. Gadzhiyev, I. O. Bakshaev, Yu. M. Zadiranov, N. D. Il’inskaya, E. L. Portnoi

ABSTRACT

Semiconductor two-sectional laser diodes with active region, consisting of two InGaAs quantum wells of different width separated with GaAs barrier are investigated. At barrier thickness of 2 nm quantum wells are coupled and diagonal optical transition originates between them. Peak in absorption spectra of lasing structure related to this diagonal transition is observed. An additional region of passive mode-locking due to this absorption peak takes place at low reverse biases on absorber section. More... »

PAGES

316-319

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785012040037

DOI

http://dx.doi.org/10.1134/s1063785012040037

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021802285


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