Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-03

AUTHORS

S. A. Kukushkin, A. V. Osipov, S. G. Zhukov, E. E. Zavarin, W. V. Lundin, M. A. Sinitsyn, M. M. Rozhavskaya, A. F. Tsatsulnikov, S. I. Troshkov, N. A. Feoktistov

ABSTRACT

A light-emitting diode (LED) structure based on group III nitride has been grown for the first time on Si(111) substrate with SiC buffer nanolayer (50- to 200-nm-thick) obtained by solid-phase epitaxy. This LED structure is characterized by record low (<108 cm−2) density of lattice misfit dislocations at a total dislocation density of ∼8 × 108 cm−2. The photo- and electroluminescence spectra of obtained structures have been measured. More... »

PAGES

297-299

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785012030261

DOI

http://dx.doi.org/10.1134/s1063785012030261

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1047088735


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