Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at λ = 5.8 μm View Full Text


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Article Info

DATE

2012-03

AUTHORS

N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’

ABSTRACT

We have experimentally studied the parameters of room-temperature photodiodes based on gradient solid solutions of the InAsSb(P) system, having a long-wavelength cut-off at λ = 5.8 μm and various geometries of non-transparent contacts on the exposed p-InAsSb(P) surface. It is established that the sensitivity (photocurrent collection efficiency) strongly depends on the perimeter of this contact: photodiodes with net structure of this contact (increased perimeter and area) are characterized by increased sensitivity even despite greater degree of shadowing of the exposed surface by the contact. More... »

PAGES

242-244

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785012030078

DOI

http://dx.doi.org/10.1134/s1063785012030078

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015631837


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