Room-temperature photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for extended (1.5–4.8 μm) spectral range View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-10-26

AUTHORS

D. A. Starostenko, V. V. Sherstnev, P. A. Alekseev, I. A. Andreev, N. D. Il’inskaya, G. G. Konovalov, O. Yu. Serebrennikova, Yu. P. Yakovlev

ABSTRACT

Photodiodes with a photosensitive area of 0.45 × 0.45 mm2 operating at room temperature in a wavelength range bounded by 4.9 μm have been created on the basis of InAs/InAs0.94Sb0.06/InAsSbP/InAs0.88Sb0.12/InAsSbP/InAs heterostructures grown by liquid phase epitaxy. A distinguishing feature of the proposed photodiodes is extended (λmax = 1.5–4.8 μm) spectral sensitivity range, in which the photodiode is characterized by a monochromatic responsivity of 0.5–0.8 A/W and a dark current density of 1.0–1.5 A/cm2 at a reverse bias of 0.2 V. The differential resistance at zero bias reaches up to 20–100 Ω. The detection ability of photodiodes in the region of maximum sensitivity reaches (1–2) × 108 cm Hz1/2 W−1. More... »

PAGES

935

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785011100142

DOI

http://dx.doi.org/10.1134/s1063785011100142

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1016119632


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