Specific features of gallium nitride selective epitaxy in round windows View Full Text


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Article Info

DATE

2011-08-27

AUTHORS

W. V. Lundin, E. E. Zavarin, M. M. Rozhavskaya, S. I. Troshkov, A. F. Tsatsulnikov

ABSTRACT

Specific features of gallium nitride (GaN) selective growth by MOVPE in round windows has been studied. It is established that a decrease in the flux of ammonia results in an increase in the lateral size of crystallites, while the minimum studied fluxes lead to a decrease in the height of crystallites and the formation of (0001) and \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$\left\{ {1\bar 100} \right\}$\end{document} facets in addition to the usual \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$\left\{ {1\bar 101} \right\}$\end{document} facets. The phenomenon of growth suppression was observed for a fraction of crystallites at the onset of their coalescence. In addition, selective growth was suppressed near large nonmasked surface regions. More... »

PAGES

735

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785011080104

DOI

http://dx.doi.org/10.1134/s1063785011080104

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1047993871


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