Reverse recovery of Si/Si1 − xGex heterodiodes fabricated by direct bonding View Full Text


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Article Info

DATE

2011-07

AUTHORS

I. V. Grekhov, E. I. Belyakova, L. S. Kostina, A. V. Rozhkov, T. S. Argunova, G. A. Oganesyan

ABSTRACT

We have studied the process of reverse recovery of Si/Si1 − xGex heterodiodes fabricated by direct bonding of (111)-oriented n-type single crystal silicon wafers with p-type Si1 − xGex wafers of the same orientation containing 4–8 at. % Ge. An increase in the germanium concentration NGe in p-Si1 − xGex layer is accompanied by a decrease in the reverse recovery time of heterodiodes. The presence of a sharp drop in the reverse current on the diode recovery characteristic can be explained by the existence of a narrow region with decreased minority carrier lifetime at the bonding interface (compared to carrier lifetime in the bulk), which is caused by the accumulation of misfit dislocations (generated by bonding (in this region). The results demonstrate the principal possibility of creating fast-recovery diodes based on the Si/Si1 − xGex heterosystem for high-power semiconductor devices manufactured using the direct bonding technology. More... »

PAGES

632

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785011070078

DOI

http://dx.doi.org/10.1134/s1063785011070078

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015243720


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