Photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for 2.5–4.9 μm spectral range View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-01

AUTHORS

V. V. Sherstnev, D. Starostenko, I. A. Andreev, G. G. Konovalov, N. D. Il’inskaya, O. Yu. Serebrennikova, Yu. P. Yakovlev

ABSTRACT

Photodiodes with a photosensitive area diameter of 0.3 mm operating at room temperature in a middle-IR (2.5–4.9 μm) wavelength range have been created based on InAs/InAs0.94Sb0.06/InAsSbP/InAs0.88Sb0.12/InAsSbP/InAs heterostructures grown by liquid phase epitaxy. Distinguishing features of the proposed photodiodes are a high monochromatic responsivity, which reaches a maximum of 0.6–0.8 A/W at λmax = 4.0–4.6 μm, and a low dark current density of (1.3–7.5) × 10−2 A/cm2 at a reverse bias of 0.2 V. The differential resistance at zero bias reaches up to 700–800 Ω. The detection ability of photodiodes in the spectral interval of maximum sensitivity reaches (5–8) × 108 cm Hz1/2 W−1. More... »

PAGES

5-7

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785011010135

DOI

http://dx.doi.org/10.1134/s1063785011010135

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1042914142


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