High growth rate of AlN in a planetary MOVPE reactor View Full Text


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Article Info

DATE

2010-12-29

AUTHORS

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, P. N. Brunkov, E. E. Zavarin, A. F. Tsatsulnikov

ABSTRACT

AlN growth in a low-scale production AIX2000HT MOVPE system was studied. The dependence of the growth rate on ammonia flow was shown to be of a threshold nature originating from gas-phase parasitic reactions. An AlN growth rate up to 8.6 μm/h under optimized reactor conditions was demonstrated.

PAGES

1133-1135

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785010120205

DOI

http://dx.doi.org/10.1134/s1063785010120205

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049490402


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