Photoluminescence of CdHgTe epilayers grown on silicon substrates View Full Text


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Article Info

DATE

2010-12-29

AUTHORS

K. D. Mynbaev, N. L. Bazhenov, V. I. Ivanov-Omskiĭ, V. A. Smirnov, M. V. Yakushev, A. V. Sorochkin, V. S. Varavin, N. N. Mikhailov, G. Yu. Sidorov, S. A. Dvoretsky, Yu. G. Sidorov

ABSTRACT

We have studied the photoluminescence (PL) spectra of thin layers of mercury cadmium telluride (CdHgTe) solid solutions grown by molecular beam epitaxy on silicon substrates. It is established that a disorder in the solid solution structure in these layers does not exceed that in the layers grown by the same method on GaAs substrates. The PL spectra of CdHgTe/Si samples exhibit emission lines characteristic of the structurally perfect material, in particular, the lines due to donor-acceptor recombination and the recombination of excitons bound to impurities. More... »

PAGES

1085-1088

References to SciGraph publications

  • 2008-05-31. MBE HgCdTe on Alternative Substrates for FPA Applications in JOURNAL OF ELECTRONIC MATERIALS
  • 2009-09-29. Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers in JOURNAL OF ELECTRONIC MATERIALS
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    http://dx.doi.org/10.1134/s1063785010120060

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