High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-11

AUTHORS

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, S. O. Usov, V. S. Sizov, A. L. Zakgeim, A. E. Chernyakov, A. F. Tsatsul’nikov

ABSTRACT

A new method of forming the active region in high-efficiency InGaN/GaN/AlGaN light-emitting diode (LED) structure for long-wave green range is described. The introduction of a short-period InGaN/GaN superlattice situated immediately under the emitting quantum well and overgrown with GaN layer at reduced temperature leads to a more than tenfold increase in the efficiency of emission. For the proposed LEDs, the maximum quantum efficiency was 12% at 552 nm and 8% at 560 nm. More... »

PAGES

1066-1068

Journal

TITLE

Technical Physics Letters

ISSUE

11

VOLUME

36

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785010110283

DOI

http://dx.doi.org/10.1134/s1063785010110283

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1029078200


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