Use of sublimation epitaxy for obtaining volume 3C-SiC crystals View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-06

AUTHORS

A. A. Lebedev, P. L. Abramov, A. S. Zubrilov, E. V. Bogdanova, S. P. Lebedev, N. V. Seredova, A. S. Tregubova

ABSTRACT

It is demonstrated that polytype-homogeneous, thick (>100 μm) epitaxial 3C-SiC layers of good structural quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in vacuum. These layers can be used as seeds for growing volume 3C-SiC crystals by the modified Lely method. More... »

PAGES

574-576

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785010060258

DOI

http://dx.doi.org/10.1134/s1063785010060258

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1025879858


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