Indium-rich island structures formed by in-situ nanomasking technology View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-11-18

AUTHORS

E. E. Zavarin, A. V. Sakharov, W. V. Lundin, D. V. Davydov, V. S. Sizov, P. N. Brunkov, V. V. Goncharov, A. F. Tsatsulnikov

ABSTRACT

A new method of forming InGaN/GaN nanostructures emitting in the long-wavelength green spectral range is proposed and implemented. The method is based on growing a thin InGaN layer over nanosized pits formed in situ by etching a locally AlN-masked GaN layer in a hydrogen-containing atmosphere.

PAGES

1016

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785009110133

DOI

http://dx.doi.org/10.1134/s1063785009110133

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1048025429


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