Diffusion redistribution of zinc during the doping of structurally inhomogeneous epitaxial layers of gallium phosphide View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-07

AUTHORS

E. A. Panyutin

ABSTRACT

The distribution of zinc established during its diffusion accompanying the doping of gallium phosphide layers in the course of epitaxial growth has been numerically simulated. The internal redistribution of zinc introduced in the presence of a structural macrodefect (in particular, screw dislocation) is treated according to the dissociative model of the interstitial-lattice site diffusion. This model assumes the existence of zinc ions in two states with different diffusion mobilities that actively interact with gallium vacancies. The results of an analysis of solutions of a nonlinear boundary-value problem demonstrate the existence of sharply inhomogeneous distributions of the zinc ion concentration, which explain some experimentally observed anomalies in the reverse current of zinc-doped epitaxial GaP-based p-tn junctions. More... »

PAGES

601-605

Journal

TITLE

Technical Physics Letters

ISSUE

7

VOLUME

35

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785009070050

DOI

http://dx.doi.org/10.1134/s1063785009070050

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1053252332


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