Ontology type: schema:ScholarlyArticle
2009-02
AUTHORSA. I. Izhnin, I. I. Izhnin, K. D. Mynbaev, V. I. Ivanov-Omskiĭ, N. L. Bazhenov, V. A. Smirnov, V. S. Varavin, N. N. Mikhailov, G. Yu. Sidorov
ABSTRACTWe have studied the influence of various postgrowth treatments (annealing in helium atmosphere or mercury vapor, low-energy ion etching) on the optical and photoelectrical properties of mercury cadmium telluride (CdxHg1 − xTe) heteroepitaxial structures for the photo- and optoelectronic devices operating in the middle infrared range (3–5 μm). It is established that the annealing in mercury vapor is optimum for improving the photoluminescence characteristics in this range. More... »
PAGES147-150
http://scigraph.springernature.com/pub.10.1134/s1063785009020151
DOIhttp://dx.doi.org/10.1134/s1063785009020151
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