Effect of annealing on the optical and photoelectrical properties of CdxHg1 − xTe heteroepitaxial structures for the middle infrared range View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-02

AUTHORS

A. I. Izhnin, I. I. Izhnin, K. D. Mynbaev, V. I. Ivanov-Omskiĭ, N. L. Bazhenov, V. A. Smirnov, V. S. Varavin, N. N. Mikhailov, G. Yu. Sidorov

ABSTRACT

We have studied the influence of various postgrowth treatments (annealing in helium atmosphere or mercury vapor, low-energy ion etching) on the optical and photoelectrical properties of mercury cadmium telluride (CdxHg1 − xTe) heteroepitaxial structures for the photo- and optoelectronic devices operating in the middle infrared range (3–5 μm). It is established that the annealing in mercury vapor is optimum for improving the photoluminescence characteristics in this range. More... »

PAGES

147-150

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785009020151

DOI

http://dx.doi.org/10.1134/s1063785009020151

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1009193438


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