Current-voltage characteristics of Si/Si1 − xGex heterodiodes fabricated by direct bonding View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-12-23

AUTHORS

I. V. Grekhov, E. I. Belyakova, L. S. Kostina, A. V. Rozhkov, Sh. A. Yusupova, L. M. Sorokin, T. S. Argunova, N. V. Abrosimov, N. A. Matchanov, J. H. Je

ABSTRACT

We have studied the current-voltage (I–U) characteristics of Si/Si1 − xGex (0.02 < x < 0.15) heterodiodes fabricated by direct bonding of (111)-oriented n-type single crystal silicon wafers with p-type Si1 − xGex wafers of the same orientation containing 2–15 at % Ge. An increase in the germanium concentration NGe in Si1 − xGex crystals is accompanied by a growth in the density of crystal lattice defects, which leads to a decrease in the minority carrier lifetime in the base of the heterodiode and an increase in the recombination component of the forward current and in the differential resistance (slope) of the I–U curve. However, for all samples with NGe ≤ 15 at %, the I–U curves of Si/Si1 − xGex heterodiodes are satisfactory in the entire range of current densities (1 mA/cm2–200 A/cm2). This result shows good prospects for using direct bonding technology in the fabrication of Si/Si1 − xGex heterostructures. More... »

PAGES

1027-1029

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785008120110

DOI

http://dx.doi.org/10.1134/s1063785008120110

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045689603


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