High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-12-23

AUTHORS

I. I. Novikov, N. Yu. Gordeev, M. V. Maksimov, A. E. Zhukov, Yu. M. Shernyakov, V. M. Ustinov, N. V. Kryzhanovskaya, A. S. Payusov, I. L. Krestnikov, D. A. Lifshits, S. S. Mikhrin, A. R. Kovsh

ABSTRACT

We have created and studied the properties of semiconductor lasers on InAs/GaAs quantum dots with a maximum modal gain of 46 cm−1 at a wavelength of 1325 nm achieved due to increased optical confinement factor and optimized heterostructure growth parameters. In a wavelength interval of 1315–1345 nm, the modal gain exceeded 20 cm−1 at a current density of 500 A/cm2. More... »

PAGES

1008-1010

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785008120055

DOI

http://dx.doi.org/10.1134/s1063785008120055

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1036397451


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