Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-11

AUTHORS

L. M. Sorokin, N. V. Veselov, M. P. Shcheglov, A. E. Kalmykov, A. A. Sitnikova, N. A. Feoktistov, A. V. Osipov, S. A. Kukushkin

ABSTRACT

First results of the electron-microscopic investigation of thin silicon carbide (SiC) layers grown on silicon using a new method of solid phase epitaxy are presented. It is shown that, at the initial stage of epitaxial growth, a transition layer is formed which consists of various SiC polytypes. This layer occurs at the interface between the substrate and a single-crystalline SiC layer possessing predominantly a 3C polytype structure. It is established that pores with dimensions ranging from a fraction of micron to several dozen nanometers are formed in a near-surface layer of the silicon substrate, which favor the growth of epitaxial, weakly strained single-crystalline SiC layers. More... »

PAGES

992-994

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785008110278

DOI

http://dx.doi.org/10.1134/s1063785008110278

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020552102


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