Ion-beam-induced modification of the electrical properties of vacancy-doped mercury cadmium telluride View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-11-28

AUTHORS

I. I. Izhnin, S. A. Dvoretsky, N. N. Mikhailov, Yu. G. Sidorov, V. S. Varavin, M. Pociask, K. D. Mynbaev

ABSTRACT

The effect of ion-beam milling (IBM) on the electrical properties of vacancy-doped mercury cadmium telluride (MCT) p-Hg1−xCdxTe (x ∼ 0.22) has been studied. The samples were prepared by thermal annealing of molecular beam epitaxy (MBE)-grown heterostructures and the films and single crystals grown by liquid-phase epitaxy (LPE). The etching of samples by IBM resulted in the formation of donor centers. In MBE-grown heterostructures (but not in LPE-grown samples), the concentration of these centers reached ∼1017 cm−3. It is established that the appearance of a high concentration of donor centers in the heterostructures is caused by the IBM-induced activation of neutral defects formed during epitaxial growth. The probable nature of defects is discussed. More... »

PAGES

981-984

References to SciGraph publications

  • 2000-03. Conductivity type conversion in Hg1-xCdxTe in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063785008110242

    DOI

    http://dx.doi.org/10.1134/s1063785008110242

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1038160210


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