InGaAlN heterostructures for LEDs grown on patterned sapphire substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-11

AUTHORS

W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. E. Nikolaev, E. Yu. Lundina, A. V. Sakharov, S. I. Troshkov, A. F. Tsatsul’nikov

ABSTRACT

One of the main factors that limit the maximum attainable efficiency of InGaAlN-based light-emitting diode (LED) structures grown on standard sapphire substrates is the low efficacy of extracting light from devices. A promising solution of this problem consists in using specially profiled (patterned) sapphire substrates. A method for the formation of a special surface microrelief on the sapphire substrates is described. The properties of GaN epilayers and InGaAlN-based LED heterostructures grown on such substrates are presented. More... »

PAGES

924-926

Journal

TITLE

Technical Physics Letters

ISSUE

11

VOLUME

34

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785008110072

DOI

http://dx.doi.org/10.1134/s1063785008110072

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1046506286


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lundin", 
        "givenName": "W. V.", 
        "id": "sg:person.013543521751.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013543521751.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zavarin", 
        "givenName": "E. E.", 
        "id": "sg:person.015451372144.61", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sinitsyn", 
        "givenName": "M. A.", 
        "id": "sg:person.014606113257.46", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014606113257.46"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nikolaev", 
        "givenName": "A. E.", 
        "id": "sg:person.010050311505.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010050311505.33"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lundina", 
        "givenName": "E. Yu.", 
        "id": "sg:person.014315204171.70", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014315204171.70"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sakharov", 
        "givenName": "A. V.", 
        "id": "sg:person.010201114167.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Troshkov", 
        "givenName": "S. I.", 
        "id": "sg:person.01126063542.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01126063542.10"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsatsul\u2019nikov", 
        "givenName": "A. F.", 
        "id": "sg:person.012131633577.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012131633577.53"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/j.jcrysgro.2007.08.030", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1001935062"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.45.3436", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063076706"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2008-11", 
    "datePublishedReg": "2008-11-01", 
    "description": "One of the main factors that limit the maximum attainable efficiency of InGaAlN-based light-emitting diode (LED) structures grown on standard sapphire substrates is the low efficacy of extracting light from devices. A promising solution of this problem consists in using specially profiled (patterned) sapphire substrates. A method for the formation of a special surface microrelief on the sapphire substrates is described. The properties of GaN epilayers and InGaAlN-based LED heterostructures grown on such substrates are presented.", 
    "genre": "non_research_article", 
    "id": "sg:pub.10.1134/s1063785008110072", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "1063-7850", 
          "1090-6533"
        ], 
        "name": "Technical Physics Letters", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "11", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "34"
      }
    ], 
    "name": "InGaAlN heterostructures for LEDs grown on patterned sapphire substrates", 
    "pagination": "924-926", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "dd89a9e109c3a8ccb0cef924ec8ac7cb564374028e13dfe5502e42d0c50a6135"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785008110072"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1046506286"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785008110072", 
      "https://app.dimensions.ai/details/publication/pub.1046506286"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T23:23", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8693_00000507.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134%2FS1063785008110072"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063785008110072'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063785008110072'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063785008110072'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063785008110072'


 

This table displays all metadata directly associated to this object as RDF triples.

116 TRIPLES      21 PREDICATES      29 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785008110072 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N0a2ad7a35b2848e08d6603dd2ccc403f
4 schema:citation https://doi.org/10.1016/j.jcrysgro.2007.08.030
5 https://doi.org/10.1143/jjap.45.3436
6 schema:datePublished 2008-11
7 schema:datePublishedReg 2008-11-01
8 schema:description One of the main factors that limit the maximum attainable efficiency of InGaAlN-based light-emitting diode (LED) structures grown on standard sapphire substrates is the low efficacy of extracting light from devices. A promising solution of this problem consists in using specially profiled (patterned) sapphire substrates. A method for the formation of a special surface microrelief on the sapphire substrates is described. The properties of GaN epilayers and InGaAlN-based LED heterostructures grown on such substrates are presented.
9 schema:genre non_research_article
10 schema:inLanguage en
11 schema:isAccessibleForFree false
12 schema:isPartOf N8875dffeef7149b79195fd19f6136638
13 Nee1a96b02ab84a7c81ec12eca4673c02
14 sg:journal.1136630
15 schema:name InGaAlN heterostructures for LEDs grown on patterned sapphire substrates
16 schema:pagination 924-926
17 schema:productId N1402cac7c9d8439683fd6f5152ff7fa4
18 N3e0c632d21fb4c21b8585bb342f9c1dc
19 N960dcbd0ad834c108e20a07818762060
20 schema:sameAs https://app.dimensions.ai/details/publication/pub.1046506286
21 https://doi.org/10.1134/s1063785008110072
22 schema:sdDatePublished 2019-04-10T23:23
23 schema:sdLicense https://scigraph.springernature.com/explorer/license/
24 schema:sdPublisher N56a6f3773506404e9d3359fca14dc3cc
25 schema:url http://link.springer.com/10.1134%2FS1063785008110072
26 sgo:license sg:explorer/license/
27 sgo:sdDataset articles
28 rdf:type schema:ScholarlyArticle
29 N0a2ad7a35b2848e08d6603dd2ccc403f rdf:first sg:person.013543521751.29
30 rdf:rest N904811be4002458eb0e7d12faf71f275
31 N0a3056bbe52446cc880ee105efc838b7 rdf:first sg:person.01126063542.10
32 rdf:rest Nb17a68646bea477a947f89265548bc9c
33 N1402cac7c9d8439683fd6f5152ff7fa4 schema:name doi
34 schema:value 10.1134/s1063785008110072
35 rdf:type schema:PropertyValue
36 N3e0c632d21fb4c21b8585bb342f9c1dc schema:name dimensions_id
37 schema:value pub.1046506286
38 rdf:type schema:PropertyValue
39 N56a6f3773506404e9d3359fca14dc3cc schema:name Springer Nature - SN SciGraph project
40 rdf:type schema:Organization
41 N584826b85cdc492d82d68d05de3efbf7 rdf:first sg:person.014606113257.46
42 rdf:rest Nf1174890b6b143d89a90253ee7faaf92
43 N5d02d1b6a7124bd6914d3892b74f0342 rdf:first sg:person.010201114167.20
44 rdf:rest N0a3056bbe52446cc880ee105efc838b7
45 N8875dffeef7149b79195fd19f6136638 schema:issueNumber 11
46 rdf:type schema:PublicationIssue
47 N904811be4002458eb0e7d12faf71f275 rdf:first sg:person.015451372144.61
48 rdf:rest N584826b85cdc492d82d68d05de3efbf7
49 N918253200b274da7a4ef07b8a72c2f2a rdf:first sg:person.014315204171.70
50 rdf:rest N5d02d1b6a7124bd6914d3892b74f0342
51 N960dcbd0ad834c108e20a07818762060 schema:name readcube_id
52 schema:value dd89a9e109c3a8ccb0cef924ec8ac7cb564374028e13dfe5502e42d0c50a6135
53 rdf:type schema:PropertyValue
54 Nb17a68646bea477a947f89265548bc9c rdf:first sg:person.012131633577.53
55 rdf:rest rdf:nil
56 Nee1a96b02ab84a7c81ec12eca4673c02 schema:volumeNumber 34
57 rdf:type schema:PublicationVolume
58 Nf1174890b6b143d89a90253ee7faaf92 rdf:first sg:person.010050311505.33
59 rdf:rest N918253200b274da7a4ef07b8a72c2f2a
60 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
61 schema:name Engineering
62 rdf:type schema:DefinedTerm
63 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
64 schema:name Materials Engineering
65 rdf:type schema:DefinedTerm
66 sg:journal.1136630 schema:issn 1063-7850
67 1090-6533
68 schema:name Technical Physics Letters
69 rdf:type schema:Periodical
70 sg:person.010050311505.33 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
71 schema:familyName Nikolaev
72 schema:givenName A. E.
73 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010050311505.33
74 rdf:type schema:Person
75 sg:person.010201114167.20 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
76 schema:familyName Sakharov
77 schema:givenName A. V.
78 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20
79 rdf:type schema:Person
80 sg:person.01126063542.10 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
81 schema:familyName Troshkov
82 schema:givenName S. I.
83 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01126063542.10
84 rdf:type schema:Person
85 sg:person.012131633577.53 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
86 schema:familyName Tsatsul’nikov
87 schema:givenName A. F.
88 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012131633577.53
89 rdf:type schema:Person
90 sg:person.013543521751.29 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
91 schema:familyName Lundin
92 schema:givenName W. V.
93 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013543521751.29
94 rdf:type schema:Person
95 sg:person.014315204171.70 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
96 schema:familyName Lundina
97 schema:givenName E. Yu.
98 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014315204171.70
99 rdf:type schema:Person
100 sg:person.014606113257.46 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
101 schema:familyName Sinitsyn
102 schema:givenName M. A.
103 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014606113257.46
104 rdf:type schema:Person
105 sg:person.015451372144.61 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
106 schema:familyName Zavarin
107 schema:givenName E. E.
108 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61
109 rdf:type schema:Person
110 https://doi.org/10.1016/j.jcrysgro.2007.08.030 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001935062
111 rdf:type schema:CreativeWork
112 https://doi.org/10.1143/jjap.45.3436 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063076706
113 rdf:type schema:CreativeWork
114 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
115 schema:name Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
116 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...