InGaAlN heterostructures for LEDs grown on patterned sapphire substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-11

AUTHORS

W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. E. Nikolaev, E. Yu. Lundina, A. V. Sakharov, S. I. Troshkov, A. F. Tsatsul’nikov

ABSTRACT

One of the main factors that limit the maximum attainable efficiency of InGaAlN-based light-emitting diode (LED) structures grown on standard sapphire substrates is the low efficacy of extracting light from devices. A promising solution of this problem consists in using specially profiled (patterned) sapphire substrates. A method for the formation of a special surface microrelief on the sapphire substrates is described. The properties of GaN epilayers and InGaAlN-based LED heterostructures grown on such substrates are presented. More... »

PAGES

924-926

Journal

TITLE

Technical Physics Letters

ISSUE

11

VOLUME

34

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785008110072

DOI

http://dx.doi.org/10.1134/s1063785008110072

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1046506286


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