Interfacial transformations in the a-SiC/a-Si/6H-SiC structure caused by high-temperature (1500°C) annealing View Full Text


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Article Info

DATE

2008-07-29

AUTHORS

P. A. Ivanov, T. P. Samsonova

ABSTRACT

We have studied the reactions that take place at interfaces in an a-SiC/a-Si/6H-SiC sandwich structure, which was obtained by the sequential deposition of amorphous silicon (a-Si) and amorphous silicon carbide (a-SiC) onto a 6H-SiC substrate by ion sputtering in vacuum and then annealed at 1500°C (i.e., above the melting point of silicon). It is shown that the annealing leads to complete îdissipationî of the silicon film in SiC, probably as a result of the dissolution of carbon in the silicon melt and the diffusion of silicon into SiC. More... »

PAGES

591

References to SciGraph publications

  • 2007-05-05. Diffusion bonding of Ti3AlC2 ceramic via a Si interlayer in JOURNAL OF MATERIALS SCIENCE
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063785008070171

    DOI

    http://dx.doi.org/10.1134/s1063785008070171

    DIMENSIONS

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