Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-12

AUTHORS

A. A. Lebedev, P. L. Abramov, N. V. Agrinskaya, V. I. Kozub, A. N. Kuznetsov, S. P. Lebedev, G. A. Oganesyan, L. M. Sorokin, A. V. Chernyaev, D. V. Shamshur

ABSTRACT

Epitaxial 3C-SiC films have been grown on 6H-SiC substrates by sublimation epitaxy in vacuum. The Hall effect in these heterostructures and their magnetoresistance have been measured in a temperature range from 1.4 to 300 K. At liquid-helium temperatures, the samples are characterized by low resistance and exhibit negative magnetoresistance in weak fields (∼1 T). Analysis of the experimental results suggests that the low resistance of samples is most probably due to the metal-insulator transition in the epitaxial 3C-SiC films. More... »

PAGES

1035-1037

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785007120152

DOI

http://dx.doi.org/10.1134/s1063785007120152

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1016531549


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