Impact-ionization-stimulated electroluminescence in isotype n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-12

AUTHORS

N. L. Bazhenov, B. E. Zhurtanov, K. D. Mynbaev, A. P. Astakhova, A. N. Imenkov, M. P. Mikhaĭlova, V. A. Smirnov, N. D. Stoyanov, Yu. P. Yakovlev

ABSTRACT

We have studied electroluminescence in n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures with isotype heterojunctions, in which the quantum efficiency of emission is increased due to the additional production of electron-hole pairs as a result of the impact ionization that takes place near the heterointerface. The impact ionization in such heterostructures is possible due to the presence of deep wells in the energy band structure. More... »

PAGES

987-989

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785007120012

DOI

http://dx.doi.org/10.1134/s1063785007120012

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1037194071


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