Metamorphic InAs quantum dots: Photoluminescence features related to cooperative phenomena in the quantum dot-matrix system View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-07

AUTHORS

A. P. Vasil’ev, A. G. Gladyshev, A. E. Zhukov, N. V. Kryzhanovskaya, V. S. Mikhrin, Yu. G. Musikhin, V. S. Petrov, V. V. Ratnikov, N. M. Shmidt

ABSTRACT

The photoluminescence (PL) characteristics have been studied in two series of nanostructures comprising metamorphic InAs quantum dots (QDs) in InxGa1−xAs matrices of variable composition (x = 0.14–0.30) with and without 5-nm-thick inserts of In0.4Ga0.6As or In0.4Al0.6As solid solutions. It is established that cooperative phenomena, which take place in the QD-matrix system with inserts when the indium arsenide content in the matrix exceeds 20% (x > 0.20), proceed according to different mechanisms depending on the insert composition. These phenomena substantially change the PL peak position and intensity and are more important than the size and homogeneity of the initially introduced QDs as factors determining the optical properties of the nanostructures under consideration. More... »

PAGES

590-593

Journal

TITLE

Technical Physics Letters

ISSUE

7

VOLUME

33

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785007070152

DOI

http://dx.doi.org/10.1134/s1063785007070152

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1019795859


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