Stark effect in a multilayer system of coupled InAs/GaAs quantum dots View Full Text


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Article Info

DATE

2007-06

AUTHORS

M. M. Sobolev, A. E. Zhukov, A. P. Vasil’ev, E. S. Semenova, V. S. Mikhrin

ABSTRACT

Electron emission in a system of vertically coupled quantum dots (VCQDs) in InAs/GaAs p-n-heterostructures obtained by molecular beam epitaxy has been studied by means of deep-level transient spectroscopy (DLTS) as a function of the number of quantum dot (QD) rows and the reverse bias voltage. For a GaAs spacer thickness of dGaAs = 40 Å, the system occurs in a molecular state, irrespective of the number of QD rows. An increase in this number leads to a decrease in the Stark shift, which is probably related to a decrease in the lattice strain potential in the vicinity of VCQDs. More... »

PAGES

527-529

References to SciGraph publications

  • 1999-05. Metastable population of self-organized InAs/GaAs quantum dots in JOURNAL OF ELECTRONIC MATERIALS
  • 2000-05-04. On the string description of confinement in JOURNAL OF HIGH ENERGY PHYSICS
  • Identifiers

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    http://scigraph.springernature.com/pub.10.1134/s1063785007060247

    DOI

    http://dx.doi.org/10.1134/s1063785007060247

    DIMENSIONS

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