Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-06

AUTHORS

A. A. Lebedev, V. V. Zelenin, P. L. Abramov, S. P. Lebedev, A. N. Smirnov, L. M. Sorokin, M. P. Shcheglov, R. Yakimova

ABSTRACT

Epitaxial 3C-SiC films grown on the (0001)C face of 6H-SiC substrates by sublimation epitaxy in vacuum have been studied. The results of x-ray diffraction measurements show evidence of a rather high structural perfection of silicon carbide epilayers. The Raman spectroscopy data confirm that the 3C-SiC layer grows immediately on the 6H-SiC substrate without any transition layers. It is concluded that the structures under consideration are well suited for the investigation of a two-dimensional electron gas at the 3C-SiC/6C-SiC heterojunction More... »

PAGES

524-526

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785007060235

DOI

http://dx.doi.org/10.1134/s1063785007060235

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1040272495


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