1.5–1.8 μm photoluminescence of MBE-grown HgCdTe films View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-06

AUTHORS

V. I. Ivanov-Omskiĭ, N. L. Bazhenov, K. D. Mynbaev, V. A. Smirnov, V. S. Varavin, A. A. Babenko, D. G. Ikusov, G. Yu. Sidorov

ABSTRACT

The photoluminescence (PL) of HgCdTe films grown by molecular beam epitaxy (MBE) has been studied in the 1.5–1.8 μm wavelength range. The post-growth annealing of samples for 20 h at 270°C in an inert atmosphere leads to changes in the spectrum and intensity of luminescence. The spectral changes are related to an increasing homogeneity of the film composition in depth as a result of the mutual diffusion of alloy components. An increase in the room-temperature PL intensity is due to the improved structure of annealed films. More... »

PAGES

471-473

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785007060089

DOI

http://dx.doi.org/10.1134/s1063785007060089

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1030514781


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