Mechanism of misfit stress relaxation during epitaxial growth of GaN on porous SiC substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-12

AUTHORS

M. G. Mynbaeva, O. V. Konstantinov, K. D. Mynbaev, A. E. Romanov, A. A. Sitnikova

ABSTRACT

A decrease in the density of threading dislocations has been observed during the epitaxial growth of GaN layers on porous silicon carbide (PSC) substrates by means of chloride hydride vapor phase epitaxy. It is established that, in the early growth stage, the substrate is capable of redistributing stresses in the growing heterostructure, which leads to relaxation of the lattice misfit stresses via generation of a superlattice of planar defects. In the subsequent growth stage, these defects prevent the propagation of threading dislocations. Owing to this phenomenon, 1-μm-thick GaN layers on PSC can be obtained with a density of dislocations reduced by two orders of magnitude as compared to epilayers of the same thickness grown on nonporous substrates. More... »

PAGES

1011-1013

References to SciGraph publications

Journal

TITLE

Technical Physics Letters

ISSUE

12

VOLUME

32

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785006120042

DOI

http://dx.doi.org/10.1134/s1063785006120042

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1003035614


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