Direct bonding of silicon carbide wafers with a regular relief at the interface View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-05

AUTHORS

I. V. Grekhov, L. S. Kostina, T. S. Argunova, E. I. Belyakova, J. H. Je, P. A. Ivanov, T. P. Samsonova

ABSTRACT

The direct bonding of two oxide-free 6H-SiC(0001) silicon carbide single crystal wafers, one smooth and another bearing an artificial microscopic relief, has been studied. According to the X-ray topography data, the bonded surface fraction reaches 85% of the total area. The pattern of stress distribution at the interface is aperiodic, which is indicative of an inhomogeneous microroughness of the surface of bonded wafers. More... »

PAGES

453-455

References to SciGraph publications

Journal

TITLE

Technical Physics Letters

ISSUE

5

VOLUME

32

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785006050245

DOI

http://dx.doi.org/10.1134/s1063785006050245

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1043306516


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