Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3–1.55 μm spectral range View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-03

AUTHORS

V. V. Mamutin, O. V. Bondarenko, A. Yu. Egorov, N. V. Kryzhanovskaya, Yu. M. Shernyakov, V. M. Ustinov

ABSTRACT

We have studied the radiative properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices, which are intended for the active regions of lasers operating at 1.3–1.55 μm. Using such superlattices and additional InAs monolayer insertions, it is possible to control the wavelength of room-temperature emission from InGaAsN quantum wells within 1.3–1.55 μm. The InAs/InGaAsN/GaAsN laser heterostructures are obtained, whose laser generation spectrum at 85 K corresponds to room-temperature lasing at ∼1.5 μm. More... »

PAGES

229-231

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785006030163

DOI

http://dx.doi.org/10.1134/s1063785006030163

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015560714


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