Numerical and Experimental Study of an Optimized p-SOS Diode View Full Text


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Article Info

DATE

2019-03

AUTHORS

A. G. Lyublinsky, E. I. Belyakova, I. V. Grekhov

ABSTRACT

We report on the results of experimental investigation and numerical simulation of switching of SOS diode with p+P0n+ structure and with reduced thickness of P0-base. The proposed 1D diffusion-drift model of electron–hole plasma dynamics is found to be in good agreement with the experiment. The reduction of the P0-base thickness has allowed us to double the output pulse voltage with the same switching current density. This has been reached by a considerable reduction of switching losses as well as due to the formation of the domain of a strong quasi-rectangular electric field at the P0n+ junction during the current interruption. As a result, output pulse amplitude considerably exceeds the static breakdown voltage of P0n+ junction. This effect has been observed for the first time for high-voltage semiconductor opening switches. More... »

PAGES

373-379

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063784219030186

DOI

http://dx.doi.org/10.1134/s1063784219030186

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1114353696


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