Formation and investigation of cobalt silicide ultrathin layers in Ti/Co/Ti-, TiN/Ti/Co-, and TiN/Co-on-silicon structures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-02-26

AUTHORS

V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov, S. G. Simakin

ABSTRACT

The formation of ultrathin CoSi2 layers in Ti(8 nm)/Co(10 nm)/Ti(5 nm), TiN(18 nm)/Ti(2 nm)/Co(8 nm), and TiN(18 nm)/Co(8 nm) systems magnetron-sputtered on the Si(100) surface is studied. The systems are subjected to two-step rapid thermal annealing. In between the annealing steps, the “sacrificial” layer is chemically removed and the second and third systems are additionally covered by a 17-nm-thick amorphous silicon (α-Si) layer. In the course of the fabrication process, the structures are examined using time-of-flight secondary-ion (cation) mass spectrometry, Auger electron spectroscopy, and scanning electron microscopy combined with X-ray energy dispersion microanalysis. It is shown that the above complex of analytical investigation provides efficient physical control of ultrathin silicide layer formation. More... »

PAGES

279-285

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063784212020235

DOI

http://dx.doi.org/10.1134/s1063784212020235

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1040870181


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