Influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-05

AUTHORS

N. I. Klyui, V. G. Litovchenko, A. N. Lukyanov, L. V. Neselevskaya, A. V. Sarikov, V. G. Dyskin, U. Kh. Gaziev, Z. S. Settarova, M. N. Tursunov

ABSTRACT

The influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells is studied theoretically. The values of the short-circuit current density for Si solar cells covered by diamond-like carbon films deposited at different concentrations of nitrogen in the gas mixture are calculated and compared with the associated values for uncovered solar cells. It is shown that the short-circuit current density increases with nitrogen concentration in the gas mixture because of a lower light absorption by the growing film. Optimum thicknesses of the diamond-like carbon films are calculated that provides a maximal increase in the output short-circuit current density of Si-based solar cells under both AM1.5 and AM0 conditions. More... »

PAGES

654-658

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063784206050197

DOI

http://dx.doi.org/10.1134/s1063784206050197

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1047409466


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.418751.e", 
          "name": [
            "Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Klyui", 
        "givenName": "N. I.", 
        "id": "sg:person.07400026723.51", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07400026723.51"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.418751.e", 
          "name": [
            "Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Litovchenko", 
        "givenName": "V. G.", 
        "id": "sg:person.016237526535.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016237526535.09"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.418751.e", 
          "name": [
            "Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lukyanov", 
        "givenName": "A. N.", 
        "id": "sg:person.015257647277.56", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015257647277.56"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, 03028, Kiev, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.418751.e", 
          "name": [
            "Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, 03028, Kiev, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Neselevskaya", 
        "givenName": "L. V.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Hahn-Meitner-Institut Berlin, Kekul\u00e9stra\u00dfe 5, 12489, Berlin, Germany", 
          "id": "http://www.grid.ac/institutes/grid.424048.e", 
          "name": [
            "Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, 03028, Kiev, Ukraine", 
            "Hahn-Meitner-Institut Berlin, Kekul\u00e9stra\u00dfe 5, 12489, Berlin, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sarikov", 
        "givenName": "A. V.", 
        "id": "sg:person.012672356116.80", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012672356116.80"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Physicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, 70084, Tashkent, Uzbekistan", 
          "id": "http://www.grid.ac/institutes/grid.499319.f", 
          "name": [
            "Physicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, 70084, Tashkent, Uzbekistan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dyskin", 
        "givenName": "V. G.", 
        "id": "sg:person.010254252307.75", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010254252307.75"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Physicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, 70084, Tashkent, Uzbekistan", 
          "id": "http://www.grid.ac/institutes/grid.499319.f", 
          "name": [
            "Physicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, 70084, Tashkent, Uzbekistan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gaziev", 
        "givenName": "U. Kh.", 
        "id": "sg:person.07660702425.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07660702425.17"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Physicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, 70084, Tashkent, Uzbekistan", 
          "id": "http://www.grid.ac/institutes/grid.499319.f", 
          "name": [
            "Physicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, 70084, Tashkent, Uzbekistan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Settarova", 
        "givenName": "Z. S.", 
        "id": "sg:person.013245632326.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013245632326.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Physicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, 70084, Tashkent, Uzbekistan", 
          "id": "http://www.grid.ac/institutes/grid.499319.f", 
          "name": [
            "Physicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, 70084, Tashkent, Uzbekistan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tursunov", 
        "givenName": "M. N.", 
        "id": "sg:person.015236350265.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015236350265.29"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2006-05", 
    "datePublishedReg": "2006-05-01", 
    "description": "The influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells is studied theoretically. The values of the short-circuit current density for Si solar cells covered by diamond-like carbon films deposited at different concentrations of nitrogen in the gas mixture are calculated and compared with the associated values for uncovered solar cells. It is shown that the short-circuit current density increases with nitrogen concentration in the gas mixture because of a lower light absorption by the growing film. Optimum thicknesses of the diamond-like carbon films are calculated that provides a maximal increase in the output short-circuit current density of Si-based solar cells under both AM1.5 and AM0 conditions.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063784206050197", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136240", 
        "issn": [
          "1063-7842", 
          "1090-6525"
        ], 
        "name": "Technical Physics", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "5", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "51"
      }
    ], 
    "keywords": [
      "diamond-like carbon films", 
      "short-circuit current density", 
      "solar cells", 
      "carbon films", 
      "antireflection properties", 
      "deposition conditions", 
      "current density", 
      "short-circuit current density increases", 
      "Si solar cells", 
      "gas mixture", 
      "current density increases", 
      "low light absorption", 
      "optimum thickness", 
      "AM0 conditions", 
      "films", 
      "Si", 
      "light absorption", 
      "density increases", 
      "AM1.5", 
      "properties", 
      "density", 
      "mixture", 
      "thickness", 
      "conditions", 
      "influence", 
      "different concentrations", 
      "nitrogen concentration", 
      "values", 
      "increase", 
      "absorption", 
      "concentration", 
      "nitrogen", 
      "cells", 
      "maximal increase"
    ], 
    "name": "Influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells", 
    "pagination": "654-658", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1047409466"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063784206050197"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063784206050197", 
      "https://app.dimensions.ai/details/publication/pub.1047409466"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-09-02T15:51", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220902/entities/gbq_results/article/article_425.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063784206050197"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

149 TRIPLES      20 PREDICATES      58 URIs      51 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063784206050197 schema:about anzsrc-for:02
2 schema:author Nba3aacabe40d4f399526d2c2d6734498
3 schema:datePublished 2006-05
4 schema:datePublishedReg 2006-05-01
5 schema:description The influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells is studied theoretically. The values of the short-circuit current density for Si solar cells covered by diamond-like carbon films deposited at different concentrations of nitrogen in the gas mixture are calculated and compared with the associated values for uncovered solar cells. It is shown that the short-circuit current density increases with nitrogen concentration in the gas mixture because of a lower light absorption by the growing film. Optimum thicknesses of the diamond-like carbon films are calculated that provides a maximal increase in the output short-circuit current density of Si-based solar cells under both AM1.5 and AM0 conditions.
6 schema:genre article
7 schema:isAccessibleForFree false
8 schema:isPartOf N031824ed19fb4d22ab5fcfeebf095c57
9 Ne9bfab2e592a4e96a9fa5fb290606b28
10 sg:journal.1136240
11 schema:keywords AM0 conditions
12 AM1.5
13 Si
14 Si solar cells
15 absorption
16 antireflection properties
17 carbon films
18 cells
19 concentration
20 conditions
21 current density
22 current density increases
23 density
24 density increases
25 deposition conditions
26 diamond-like carbon films
27 different concentrations
28 films
29 gas mixture
30 increase
31 influence
32 light absorption
33 low light absorption
34 maximal increase
35 mixture
36 nitrogen
37 nitrogen concentration
38 optimum thickness
39 properties
40 short-circuit current density
41 short-circuit current density increases
42 solar cells
43 thickness
44 values
45 schema:name Influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells
46 schema:pagination 654-658
47 schema:productId N0a9041615c744b91accb2a06d20cb74d
48 N1f2caea18ec049e8b47e69ee822fc05c
49 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047409466
50 https://doi.org/10.1134/s1063784206050197
51 schema:sdDatePublished 2022-09-02T15:51
52 schema:sdLicense https://scigraph.springernature.com/explorer/license/
53 schema:sdPublisher N61c6dcb65b7d493d8960b1dcaf412d6b
54 schema:url https://doi.org/10.1134/s1063784206050197
55 sgo:license sg:explorer/license/
56 sgo:sdDataset articles
57 rdf:type schema:ScholarlyArticle
58 N031824ed19fb4d22ab5fcfeebf095c57 schema:volumeNumber 51
59 rdf:type schema:PublicationVolume
60 N0a9041615c744b91accb2a06d20cb74d schema:name dimensions_id
61 schema:value pub.1047409466
62 rdf:type schema:PropertyValue
63 N1f2caea18ec049e8b47e69ee822fc05c schema:name doi
64 schema:value 10.1134/s1063784206050197
65 rdf:type schema:PropertyValue
66 N255a4ce044e54054ac66bd1a0522b22a rdf:first N46e63243de60465c9168212d907d9138
67 rdf:rest Nf3e2a0c3f3254daf8d6c864ab36a57d0
68 N37acfa8cb11c450a89f2f9e6d4f52bc6 rdf:first sg:person.016237526535.09
69 rdf:rest N9b8f04f8ca054ca2b6d232f884f1f11c
70 N46e63243de60465c9168212d907d9138 schema:affiliation grid-institutes:grid.418751.e
71 schema:familyName Neselevskaya
72 schema:givenName L. V.
73 rdf:type schema:Person
74 N5d4014ee8f86406d911a3bd22809436a rdf:first sg:person.013245632326.19
75 rdf:rest N5fc31790d71c49c19fe6877325d29207
76 N5fc31790d71c49c19fe6877325d29207 rdf:first sg:person.015236350265.29
77 rdf:rest rdf:nil
78 N61c6dcb65b7d493d8960b1dcaf412d6b schema:name Springer Nature - SN SciGraph project
79 rdf:type schema:Organization
80 N827a6b4ff7174f78ae7fb1ec68ce109e rdf:first sg:person.010254252307.75
81 rdf:rest Ne63e803f04e241908940fc43875e66e0
82 N9b8f04f8ca054ca2b6d232f884f1f11c rdf:first sg:person.015257647277.56
83 rdf:rest N255a4ce044e54054ac66bd1a0522b22a
84 Nba3aacabe40d4f399526d2c2d6734498 rdf:first sg:person.07400026723.51
85 rdf:rest N37acfa8cb11c450a89f2f9e6d4f52bc6
86 Ne63e803f04e241908940fc43875e66e0 rdf:first sg:person.07660702425.17
87 rdf:rest N5d4014ee8f86406d911a3bd22809436a
88 Ne9bfab2e592a4e96a9fa5fb290606b28 schema:issueNumber 5
89 rdf:type schema:PublicationIssue
90 Nf3e2a0c3f3254daf8d6c864ab36a57d0 rdf:first sg:person.012672356116.80
91 rdf:rest N827a6b4ff7174f78ae7fb1ec68ce109e
92 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
93 schema:name Physical Sciences
94 rdf:type schema:DefinedTerm
95 sg:journal.1136240 schema:issn 1063-7842
96 1090-6525
97 schema:name Technical Physics
98 schema:publisher Pleiades Publishing
99 rdf:type schema:Periodical
100 sg:person.010254252307.75 schema:affiliation grid-institutes:grid.499319.f
101 schema:familyName Dyskin
102 schema:givenName V. G.
103 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010254252307.75
104 rdf:type schema:Person
105 sg:person.012672356116.80 schema:affiliation grid-institutes:grid.424048.e
106 schema:familyName Sarikov
107 schema:givenName A. V.
108 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012672356116.80
109 rdf:type schema:Person
110 sg:person.013245632326.19 schema:affiliation grid-institutes:grid.499319.f
111 schema:familyName Settarova
112 schema:givenName Z. S.
113 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013245632326.19
114 rdf:type schema:Person
115 sg:person.015236350265.29 schema:affiliation grid-institutes:grid.499319.f
116 schema:familyName Tursunov
117 schema:givenName M. N.
118 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015236350265.29
119 rdf:type schema:Person
120 sg:person.015257647277.56 schema:affiliation grid-institutes:grid.418751.e
121 schema:familyName Lukyanov
122 schema:givenName A. N.
123 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015257647277.56
124 rdf:type schema:Person
125 sg:person.016237526535.09 schema:affiliation grid-institutes:grid.418751.e
126 schema:familyName Litovchenko
127 schema:givenName V. G.
128 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016237526535.09
129 rdf:type schema:Person
130 sg:person.07400026723.51 schema:affiliation grid-institutes:grid.418751.e
131 schema:familyName Klyui
132 schema:givenName N. I.
133 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07400026723.51
134 rdf:type schema:Person
135 sg:person.07660702425.17 schema:affiliation grid-institutes:grid.499319.f
136 schema:familyName Gaziev
137 schema:givenName U. Kh.
138 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07660702425.17
139 rdf:type schema:Person
140 grid-institutes:grid.418751.e schema:alternateName Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, 03028, Kiev, Ukraine
141 schema:name Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, 03028, Kiev, Ukraine
142 rdf:type schema:Organization
143 grid-institutes:grid.424048.e schema:alternateName Hahn-Meitner-Institut Berlin, Kekuléstraße 5, 12489, Berlin, Germany
144 schema:name Hahn-Meitner-Institut Berlin, Kekuléstraße 5, 12489, Berlin, Germany
145 Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, 03028, Kiev, Ukraine
146 rdf:type schema:Organization
147 grid-institutes:grid.499319.f schema:alternateName Physicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, 70084, Tashkent, Uzbekistan
148 schema:name Physicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, 70084, Tashkent, Uzbekistan
149 rdf:type schema:Organization
 




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