Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-12

AUTHORS

A. M. Mizerov, S. A. Kukushkin, Sh. Sh. Sharofidinov, A. V. Osipov, S. N. Timoshnev, K. Yu. Shubina, T. N. Berezovskaya, D. V. Mokhov, A. D. Buravlev

ABSTRACT

The effect of the inversion of polarity in gallium nitride layers from the N-polar GaN layer to the Ga-polar GaN layer was discovered during the sequential growth of GaN films on hybrid SiC/Si(111) substrates by nitrogen plasma-assisted molecular beam epitaxy and chloride–hydride vapor phase epitaxy. A new method has been developed for the formation of crack-free Ga-polar GaN/AlN heterostructures on hybrid SiC/Si(111) substrates. The method includes two stages of growing gallium nitride layers. At the first stage, the transient N-polar GaN layer is grown on the SiC/Si(111) surface by nitrogen plasma-assisted molecular beam epitaxy. At the second stage, two layers are grown on the obtained N-polar GaN layer by chloride–hydride vapor phase epitaxy, namely, the AlN layer and then the GaN layer, which at this stage grows in the Ga-polar orientation. Etching in a KOH solution affects only the N-polar GaN transition layer and leads to its complete removal. This procedure separates the main Ga-polar GaN layer from the SiC/Si(111) substrate completely. The method enables one to grow crack-free and elastically unstressed thick GaN layers and transfer them to substrates of other materials. More... »

PAGES

2277-2281

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378341912031x

DOI

http://dx.doi.org/10.1134/s106378341912031x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1125056144


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0203", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Classical Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mizerov", 
        "givenName": "A. M.", 
        "id": "sg:person.011570622443.35", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011570622443.35"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.462405.1", 
          "name": [
            "Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kukushkin", 
        "givenName": "S. A.", 
        "id": "sg:person.014773523523.63", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014773523523.63"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sharofidinov", 
        "givenName": "Sh. Sh.", 
        "id": "sg:person.016707475151.57", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016707475151.57"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35915.3b", 
          "name": [
            "St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Osipov", 
        "givenName": "A. V.", 
        "id": "sg:person.012431777163.57", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012431777163.57"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Timoshnev", 
        "givenName": "S. N.", 
        "id": "sg:person.012447053367.11", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012447053367.11"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shubina", 
        "givenName": "K. Yu.", 
        "id": "sg:person.015366243747.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015366243747.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Berezovskaya", 
        "givenName": "T. N.", 
        "id": "sg:person.07460553147.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07460553147.33"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mokhov", 
        "givenName": "D. V.", 
        "id": "sg:person.013317604251.22", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013317604251.22"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Buravlev", 
        "givenName": "A. D.", 
        "id": "sg:person.016471405757.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016471405757.19"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063783414080137", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1002996556", 
          "https://doi.org/10.1134/s1063783414080137"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782619020143", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1113649751", 
          "https://doi.org/10.1134/s1063782619020143"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782618120175", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1109764853", 
          "https://doi.org/10.1134/s1063782618120175"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1028335812050072", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000256982", 
          "https://doi.org/10.1134/s1028335812050072"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063783408070081", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014025811", 
          "https://doi.org/10.1134/s1063783408070081"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.3103/s0025654413020143", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031612622", 
          "https://doi.org/10.3103/s0025654413020143"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2019-12", 
    "datePublishedReg": "2019-12-01", 
    "description": "The effect of the inversion of polarity in gallium nitride layers from the N-polar GaN layer to the Ga-polar GaN layer was discovered during the sequential growth of GaN films on hybrid SiC/Si(111) substrates by nitrogen plasma-assisted molecular beam epitaxy and chloride\u2013hydride vapor phase epitaxy. A new method has been developed for the formation of crack-free Ga-polar GaN/AlN heterostructures on hybrid SiC/Si(111) substrates. The method includes two stages of growing gallium nitride layers. At the first stage, the transient N-polar GaN layer is grown on the SiC/Si(111) surface by nitrogen plasma-assisted molecular beam epitaxy. At the second stage, two layers are grown on the obtained N-polar GaN layer by chloride\u2013hydride vapor phase epitaxy, namely, the AlN layer and then the GaN layer, which at this stage grows in the Ga-polar orientation. Etching in a KOH solution affects only the N-polar GaN transition layer and leads to its complete removal. This procedure separates the main Ga-polar GaN layer from the SiC/Si(111) substrate completely. The method enables one to grow crack-free and elastically unstressed thick GaN layers and transfer them to substrates of other materials.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s106378341912031x", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136591", 
        "issn": [
          "0367-3294", 
          "1063-7834"
        ], 
        "name": "Physics of the Solid State", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "12", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "61"
      }
    ], 
    "keywords": [
      "N-polar GaN layers", 
      "Ga-polar GaN layers", 
      "gallium nitride layers", 
      "chloride-hydride vapor-phase epitaxy", 
      "SiC/", 
      "GaN/AlN heterostructures", 
      "nitrogen plasma-assisted molecular beam epitaxy", 
      "nitride layer", 
      "plasma-assisted molecular beam epitaxy", 
      "GaN layers", 
      "vapor phase epitaxy", 
      "molecular beam epitaxy", 
      "phase epitaxy", 
      "SiC/Si Substrates", 
      "beam epitaxy", 
      "thick GaN layers", 
      "Si substrate", 
      "AlN layer", 
      "GaN films", 
      "transition layer", 
      "epitaxial synthesis", 
      "KOH solution", 
      "epitaxy", 
      "layer", 
      "heterostructures", 
      "substrate", 
      "inversion of polarity", 
      "sequential growth", 
      "complete removal", 
      "new method", 
      "second stage", 
      "first stage", 
      "films", 
      "method", 
      "surface", 
      "materials", 
      "removal", 
      "solution", 
      "polarity", 
      "inversion", 
      "orientation", 
      "stage", 
      "formation", 
      "effect", 
      "procedure", 
      "synthesis", 
      "growth"
    ], 
    "name": "Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates", 
    "pagination": "2277-2281", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1125056144"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s106378341912031x"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s106378341912031x", 
      "https://app.dimensions.ai/details/publication/pub.1125056144"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:35", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_800.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s106378341912031x"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s106378341912031x'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s106378341912031x'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s106378341912031x'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s106378341912031x'


 

This table displays all metadata directly associated to this object as RDF triples.

203 TRIPLES      22 PREDICATES      81 URIs      65 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s106378341912031x schema:about anzsrc-for:02
2 anzsrc-for:0203
3 anzsrc-for:0204
4 anzsrc-for:0206
5 schema:author N7b4cc92ccb7c41f2ab08c08d73dc032d
6 schema:citation sg:pub.10.1134/s1028335812050072
7 sg:pub.10.1134/s1063782618120175
8 sg:pub.10.1134/s1063782619020143
9 sg:pub.10.1134/s1063783408070081
10 sg:pub.10.1134/s1063783414080137
11 sg:pub.10.3103/s0025654413020143
12 schema:datePublished 2019-12
13 schema:datePublishedReg 2019-12-01
14 schema:description The effect of the inversion of polarity in gallium nitride layers from the N-polar GaN layer to the Ga-polar GaN layer was discovered during the sequential growth of GaN films on hybrid SiC/Si(111) substrates by nitrogen plasma-assisted molecular beam epitaxy and chloride–hydride vapor phase epitaxy. A new method has been developed for the formation of crack-free Ga-polar GaN/AlN heterostructures on hybrid SiC/Si(111) substrates. The method includes two stages of growing gallium nitride layers. At the first stage, the transient N-polar GaN layer is grown on the SiC/Si(111) surface by nitrogen plasma-assisted molecular beam epitaxy. At the second stage, two layers are grown on the obtained N-polar GaN layer by chloride–hydride vapor phase epitaxy, namely, the AlN layer and then the GaN layer, which at this stage grows in the Ga-polar orientation. Etching in a KOH solution affects only the N-polar GaN transition layer and leads to its complete removal. This procedure separates the main Ga-polar GaN layer from the SiC/Si(111) substrate completely. The method enables one to grow crack-free and elastically unstressed thick GaN layers and transfer them to substrates of other materials.
15 schema:genre article
16 schema:inLanguage en
17 schema:isAccessibleForFree false
18 schema:isPartOf Na839d1870689492ebb69623b75198ab9
19 Nea3d243d665647d4abaa95c74fa22cb8
20 sg:journal.1136591
21 schema:keywords AlN layer
22 Ga-polar GaN layers
23 GaN films
24 GaN layers
25 GaN/AlN heterostructures
26 KOH solution
27 N-polar GaN layers
28 Si substrate
29 SiC/
30 SiC/Si Substrates
31 beam epitaxy
32 chloride-hydride vapor-phase epitaxy
33 complete removal
34 effect
35 epitaxial synthesis
36 epitaxy
37 films
38 first stage
39 formation
40 gallium nitride layers
41 growth
42 heterostructures
43 inversion
44 inversion of polarity
45 layer
46 materials
47 method
48 molecular beam epitaxy
49 new method
50 nitride layer
51 nitrogen plasma-assisted molecular beam epitaxy
52 orientation
53 phase epitaxy
54 plasma-assisted molecular beam epitaxy
55 polarity
56 procedure
57 removal
58 second stage
59 sequential growth
60 solution
61 stage
62 substrate
63 surface
64 synthesis
65 thick GaN layers
66 transition layer
67 vapor phase epitaxy
68 schema:name Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates
69 schema:pagination 2277-2281
70 schema:productId N1fc82319f7944af68f3b956428d8ab53
71 Nc7e94c38969546cca530dadda0ffca4c
72 schema:sameAs https://app.dimensions.ai/details/publication/pub.1125056144
73 https://doi.org/10.1134/s106378341912031x
74 schema:sdDatePublished 2022-05-20T07:35
75 schema:sdLicense https://scigraph.springernature.com/explorer/license/
76 schema:sdPublisher N6b0d4fb925b4480e91d9434c6a39af17
77 schema:url https://doi.org/10.1134/s106378341912031x
78 sgo:license sg:explorer/license/
79 sgo:sdDataset articles
80 rdf:type schema:ScholarlyArticle
81 N1b73c858333141999b631815a2240a01 rdf:first sg:person.012431777163.57
82 rdf:rest Nc4386ed121b346638591df07fb4c593e
83 N1fc82319f7944af68f3b956428d8ab53 schema:name doi
84 schema:value 10.1134/s106378341912031x
85 rdf:type schema:PropertyValue
86 N364548891a0e41938871d7de3f050ecd rdf:first sg:person.013317604251.22
87 rdf:rest Ne465c97bd6054109b83d0968337e9e01
88 N37ab96b8f5464e6b988dff531c57baf8 rdf:first sg:person.07460553147.33
89 rdf:rest N364548891a0e41938871d7de3f050ecd
90 N6b0d4fb925b4480e91d9434c6a39af17 schema:name Springer Nature - SN SciGraph project
91 rdf:type schema:Organization
92 N7b4cc92ccb7c41f2ab08c08d73dc032d rdf:first sg:person.011570622443.35
93 rdf:rest N95d73c81f27f44d6bcc7fc652472e083
94 N9165ba6b07004688b45731edb875d4a6 rdf:first sg:person.016707475151.57
95 rdf:rest N1b73c858333141999b631815a2240a01
96 N926ea6456eed4f4a9dc31ed78ff32555 rdf:first sg:person.015366243747.29
97 rdf:rest N37ab96b8f5464e6b988dff531c57baf8
98 N95d73c81f27f44d6bcc7fc652472e083 rdf:first sg:person.014773523523.63
99 rdf:rest N9165ba6b07004688b45731edb875d4a6
100 Na839d1870689492ebb69623b75198ab9 schema:volumeNumber 61
101 rdf:type schema:PublicationVolume
102 Nc4386ed121b346638591df07fb4c593e rdf:first sg:person.012447053367.11
103 rdf:rest N926ea6456eed4f4a9dc31ed78ff32555
104 Nc7e94c38969546cca530dadda0ffca4c schema:name dimensions_id
105 schema:value pub.1125056144
106 rdf:type schema:PropertyValue
107 Ne465c97bd6054109b83d0968337e9e01 rdf:first sg:person.016471405757.19
108 rdf:rest rdf:nil
109 Nea3d243d665647d4abaa95c74fa22cb8 schema:issueNumber 12
110 rdf:type schema:PublicationIssue
111 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
112 schema:name Physical Sciences
113 rdf:type schema:DefinedTerm
114 anzsrc-for:0203 schema:inDefinedTermSet anzsrc-for:
115 schema:name Classical Physics
116 rdf:type schema:DefinedTerm
117 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
118 schema:name Condensed Matter Physics
119 rdf:type schema:DefinedTerm
120 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
121 schema:name Quantum Physics
122 rdf:type schema:DefinedTerm
123 sg:journal.1136591 schema:issn 0367-3294
124 1063-7834
125 schema:name Physics of the Solid State
126 schema:publisher Pleiades Publishing
127 rdf:type schema:Periodical
128 sg:person.011570622443.35 schema:affiliation grid-institutes:grid.4886.2
129 schema:familyName Mizerov
130 schema:givenName A. M.
131 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011570622443.35
132 rdf:type schema:Person
133 sg:person.012431777163.57 schema:affiliation grid-institutes:grid.35915.3b
134 schema:familyName Osipov
135 schema:givenName A. V.
136 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012431777163.57
137 rdf:type schema:Person
138 sg:person.012447053367.11 schema:affiliation grid-institutes:grid.4886.2
139 schema:familyName Timoshnev
140 schema:givenName S. N.
141 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012447053367.11
142 rdf:type schema:Person
143 sg:person.013317604251.22 schema:affiliation grid-institutes:grid.4886.2
144 schema:familyName Mokhov
145 schema:givenName D. V.
146 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013317604251.22
147 rdf:type schema:Person
148 sg:person.014773523523.63 schema:affiliation grid-institutes:grid.462405.1
149 schema:familyName Kukushkin
150 schema:givenName S. A.
151 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014773523523.63
152 rdf:type schema:Person
153 sg:person.015366243747.29 schema:affiliation grid-institutes:grid.4886.2
154 schema:familyName Shubina
155 schema:givenName K. Yu.
156 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015366243747.29
157 rdf:type schema:Person
158 sg:person.016471405757.19 schema:affiliation grid-institutes:grid.423485.c
159 schema:familyName Buravlev
160 schema:givenName A. D.
161 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016471405757.19
162 rdf:type schema:Person
163 sg:person.016707475151.57 schema:affiliation grid-institutes:grid.423485.c
164 schema:familyName Sharofidinov
165 schema:givenName Sh. Sh.
166 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016707475151.57
167 rdf:type schema:Person
168 sg:person.07460553147.33 schema:affiliation grid-institutes:grid.4886.2
169 schema:familyName Berezovskaya
170 schema:givenName T. N.
171 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07460553147.33
172 rdf:type schema:Person
173 sg:pub.10.1134/s1028335812050072 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000256982
174 https://doi.org/10.1134/s1028335812050072
175 rdf:type schema:CreativeWork
176 sg:pub.10.1134/s1063782618120175 schema:sameAs https://app.dimensions.ai/details/publication/pub.1109764853
177 https://doi.org/10.1134/s1063782618120175
178 rdf:type schema:CreativeWork
179 sg:pub.10.1134/s1063782619020143 schema:sameAs https://app.dimensions.ai/details/publication/pub.1113649751
180 https://doi.org/10.1134/s1063782619020143
181 rdf:type schema:CreativeWork
182 sg:pub.10.1134/s1063783408070081 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014025811
183 https://doi.org/10.1134/s1063783408070081
184 rdf:type schema:CreativeWork
185 sg:pub.10.1134/s1063783414080137 schema:sameAs https://app.dimensions.ai/details/publication/pub.1002996556
186 https://doi.org/10.1134/s1063783414080137
187 rdf:type schema:CreativeWork
188 sg:pub.10.3103/s0025654413020143 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031612622
189 https://doi.org/10.3103/s0025654413020143
190 rdf:type schema:CreativeWork
191 grid-institutes:grid.35915.3b schema:alternateName St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia
192 schema:name St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia
193 rdf:type schema:Organization
194 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, 194021, St. Petersburg, Russia
195 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
196 St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia
197 rdf:type schema:Organization
198 grid-institutes:grid.462405.1 schema:alternateName Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia
199 schema:name Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia
200 rdf:type schema:Organization
201 grid-institutes:grid.4886.2 schema:alternateName St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia
202 schema:name St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia
203 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...