Field effects in graphene in an interface contact with aqueous solutions of acetic acid and potassium hydroxide View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-10

AUTHORS

A. V. Butko, V. Yu. Butko, S. P. Lebedev, A. A. Lebedev, Yu. A. Kumzerov

ABSTRACT

For the creation of new promising chemical sensors, it is very important to study the influence of the interface between graphene and aqueous solutions of acids and alkalis on the transistor characteristics of graphene. Transistor structures on the basis of graphene grown by thermal decomposition of silicon carbide were created and studied. For the interface of graphene with aqueous solutions of acetic acid and potassium hydroxide in the transistor geometry, with a variation in the gate-to-source voltage, the field effect corresponding to the hole type of charge carriers in graphene was observed. It is established that an increase in the concentration of molecular ions in these solutions leads to an increase in the dependence of the resistance of the transistor on the gate voltage. More... »

PAGES

2089-2091

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063783417100092

DOI

http://dx.doi.org/10.1134/s1063783417100092

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1092219172


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