Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A ... View Full Text


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Article Info

DATE

2015-09

AUTHORS

S. A. Kukushkin, A. V. Osipov, M. M. Rozhavskaya, A. V. Myasoedov, S. I. Troshkov, V. V. Lundin, L. M. Sorokin, A. F. Tsatsul’nikov

ABSTRACT

This paper presents the results of the electron microscopic study of GaN/AlGaN/AlN/SiC/Si(111) structures grown by the metal-organic vapor phase epitaxy. A SiC epitaxial buffer nanolayer has been grown by a new method of substitution of atoms on the Si(111) substrate. It has been found that there is a strong dependence of the density of dislocations and V-defects on the synthesis conditions of SiC and the thickness of the AlN layer. It has been proved experimentally that the creation of a low-temperature AlN insert with a simultaneous decrease in the thickness of the AlN layer to values of no more than 50 nm makes it possible to almost completely prevent the formation of V-defects in the GaN layer. The density of screw and mixed dislocations in the GaN layer of the studied samples lies in the range from 5 × 109 to 1 × 1010 cm−2. A theoretical model of the formation of V-defects during the growth of GaN has been developed. More... »

PAGES

1899-1907

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063783415090218

DOI

http://dx.doi.org/10.1134/s1063783415090218

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1053424817


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