Fine structures and switching of electrical conductivity in labyrinth silver films on sapphire View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-04

AUTHORS

T. A. Vartanyan, I. A. Gladskikh, N. B. Leonov, S. G. Przhibel’skii

ABSTRACT

Changes in electrical resistance of silver films were measured in the range from 1013 to 103 Ω during thermal deposition on sapphire in a high vacuum, after the deposition over time, and under an applied voltage. The dependences of the electrical resistance of the films on their thickness and deposition rate were determined. It was established that, with an increase in the film thickness from 2 to 10 nm during the deposition at rates of 0.6 and 0.1 Å/s, the resistance decreases by 7.5 and 4 orders of magnitude, respectively. The measured dependences of the resistance on the deposition time were found to be close to exponential. The room-temperature resistance of 10-nm-thick films deposited at different rates changed spontaneously by 3–4 orders of magnitude in different ways: the resistance of the slowly deposited films spontaneously increased, whereas in the rapidly deposited films, it spontaneously decreased. After fine annealing, the steady-state resistance changed also differently: it increased by 2 orders of magnitude in the former case and by 9 orders of magnitude in the latter case. Under voltages above 5 V, the resistance of the rapidly deposited films abruptly decreased from ∼1012 to ∼106 Ω, and these films became ohmic. After fine annealing, they became again high-ohmic. Under voltages above 5 V, the high-ohmic films thus obtained became again low-ohmic. This cycle of electrical conductivity switching was reproduced many times. The observed phenomena were explained in the framework of the hypothesis of the formation of fine metastable structures in channels of labyrinth films, namely, protrusions and bridges that bring together the boundaries of islands and connect them into conducting clusters, respectively. More... »

PAGES

816-822

Journal

TITLE

Physics of the Solid State

ISSUE

4

VOLUME

56

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063783414040349

DOI

http://dx.doi.org/10.1134/s1063783414040349

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045090023


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "ITMO University", 
          "id": "https://www.grid.ac/institutes/grid.35915.3b", 
          "name": [
            "St. Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverkskiy pr. 49, 197101, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vartanyan", 
        "givenName": "T. A.", 
        "id": "sg:person.014263047335.51", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014263047335.51"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "ITMO University", 
          "id": "https://www.grid.ac/institutes/grid.35915.3b", 
          "name": [
            "St. Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverkskiy pr. 49, 197101, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gladskikh", 
        "givenName": "I. A.", 
        "id": "sg:person.012610623437.11", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012610623437.11"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "ITMO University", 
          "id": "https://www.grid.ac/institutes/grid.35915.3b", 
          "name": [
            "St. Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverkskiy pr. 49, 197101, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Leonov", 
        "givenName": "N. B.", 
        "id": "sg:person.014700773264.74", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014700773264.74"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "ITMO University", 
          "id": "https://www.grid.ac/institutes/grid.35915.3b", 
          "name": [
            "St. Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverkskiy pr. 49, 197101, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Przhibel\u2019skii", 
        "givenName": "S. G.", 
        "id": "sg:person.016263356305.04", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016263356305.04"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1063/1.1622990", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057726880"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1722742", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057789717"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.47.13782", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060565246"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.47.13782", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060565246"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.78.155131", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060626357"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.78.155131", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060626357"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.49.1444", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060787672"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.49.1444", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060787672"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2014-04", 
    "datePublishedReg": "2014-04-01", 
    "description": "Changes in electrical resistance of silver films were measured in the range from 1013 to 103 \u03a9 during thermal deposition on sapphire in a high vacuum, after the deposition over time, and under an applied voltage. The dependences of the electrical resistance of the films on their thickness and deposition rate were determined. It was established that, with an increase in the film thickness from 2 to 10 nm during the deposition at rates of 0.6 and 0.1 \u00c5/s, the resistance decreases by 7.5 and 4 orders of magnitude, respectively. The measured dependences of the resistance on the deposition time were found to be close to exponential. The room-temperature resistance of 10-nm-thick films deposited at different rates changed spontaneously by 3\u20134 orders of magnitude in different ways: the resistance of the slowly deposited films spontaneously increased, whereas in the rapidly deposited films, it spontaneously decreased. After fine annealing, the steady-state resistance changed also differently: it increased by 2 orders of magnitude in the former case and by 9 orders of magnitude in the latter case. Under voltages above 5 V, the resistance of the rapidly deposited films abruptly decreased from \u223c1012 to \u223c106 \u03a9, and these films became ohmic. After fine annealing, they became again high-ohmic. Under voltages above 5 V, the high-ohmic films thus obtained became again low-ohmic. This cycle of electrical conductivity switching was reproduced many times. The observed phenomena were explained in the framework of the hypothesis of the formation of fine metastable structures in channels of labyrinth films, namely, protrusions and bridges that bring together the boundaries of islands and connect them into conducting clusters, respectively.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063783414040349", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136591", 
        "issn": [
          "0367-3294", 
          "1063-7834"
        ], 
        "name": "Physics of the Solid State", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "56"
      }
    ], 
    "name": "Fine structures and switching of electrical conductivity in labyrinth silver films on sapphire", 
    "pagination": "816-822", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "d6c7380754cf1d98c46511f64ad1c5a5fe61b586d29da4ff834bea865b5305c6"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063783414040349"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1045090023"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063783414040349", 
      "https://app.dimensions.ai/details/publication/pub.1045090023"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T01:59", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8700_00000507.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134%2FS1063783414040349"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063783414040349'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063783414040349'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063783414040349'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063783414040349'


 

This table displays all metadata directly associated to this object as RDF triples.

97 TRIPLES      21 PREDICATES      32 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063783414040349 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nf5a1b7d7531b4f2ea5c4a1475223b998
4 schema:citation https://doi.org/10.1063/1.1622990
5 https://doi.org/10.1063/1.1722742
6 https://doi.org/10.1103/physrevb.47.13782
7 https://doi.org/10.1103/physrevb.78.155131
8 https://doi.org/10.1103/physrevlett.49.1444
9 schema:datePublished 2014-04
10 schema:datePublishedReg 2014-04-01
11 schema:description Changes in electrical resistance of silver films were measured in the range from 1013 to 103 Ω during thermal deposition on sapphire in a high vacuum, after the deposition over time, and under an applied voltage. The dependences of the electrical resistance of the films on their thickness and deposition rate were determined. It was established that, with an increase in the film thickness from 2 to 10 nm during the deposition at rates of 0.6 and 0.1 Å/s, the resistance decreases by 7.5 and 4 orders of magnitude, respectively. The measured dependences of the resistance on the deposition time were found to be close to exponential. The room-temperature resistance of 10-nm-thick films deposited at different rates changed spontaneously by 3–4 orders of magnitude in different ways: the resistance of the slowly deposited films spontaneously increased, whereas in the rapidly deposited films, it spontaneously decreased. After fine annealing, the steady-state resistance changed also differently: it increased by 2 orders of magnitude in the former case and by 9 orders of magnitude in the latter case. Under voltages above 5 V, the resistance of the rapidly deposited films abruptly decreased from ∼1012 to ∼106 Ω, and these films became ohmic. After fine annealing, they became again high-ohmic. Under voltages above 5 V, the high-ohmic films thus obtained became again low-ohmic. This cycle of electrical conductivity switching was reproduced many times. The observed phenomena were explained in the framework of the hypothesis of the formation of fine metastable structures in channels of labyrinth films, namely, protrusions and bridges that bring together the boundaries of islands and connect them into conducting clusters, respectively.
12 schema:genre research_article
13 schema:inLanguage en
14 schema:isAccessibleForFree false
15 schema:isPartOf N670bf062cd314273bb59d485029b3391
16 N737f356a9492435a888ffc9df63f9831
17 sg:journal.1136591
18 schema:name Fine structures and switching of electrical conductivity in labyrinth silver films on sapphire
19 schema:pagination 816-822
20 schema:productId N80e26ed3f8504989846380a5a609f640
21 N85203ba88d1346de9a5f68cf85c9bca9
22 Nd7aa02e899284d2ba63d41a9cab07c11
23 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045090023
24 https://doi.org/10.1134/s1063783414040349
25 schema:sdDatePublished 2019-04-11T01:59
26 schema:sdLicense https://scigraph.springernature.com/explorer/license/
27 schema:sdPublisher N9743c98d9a9148b293e21b2bb253378d
28 schema:url http://link.springer.com/10.1134%2FS1063783414040349
29 sgo:license sg:explorer/license/
30 sgo:sdDataset articles
31 rdf:type schema:ScholarlyArticle
32 N29948403068146d0b1329aadf1c2fd2c rdf:first sg:person.014700773264.74
33 rdf:rest N6ef38990e3a14b6c8c85668135ae57c3
34 N35da53ed22aa4b5fa7d5095aacbd850a rdf:first sg:person.012610623437.11
35 rdf:rest N29948403068146d0b1329aadf1c2fd2c
36 N670bf062cd314273bb59d485029b3391 schema:issueNumber 4
37 rdf:type schema:PublicationIssue
38 N6ef38990e3a14b6c8c85668135ae57c3 rdf:first sg:person.016263356305.04
39 rdf:rest rdf:nil
40 N737f356a9492435a888ffc9df63f9831 schema:volumeNumber 56
41 rdf:type schema:PublicationVolume
42 N80e26ed3f8504989846380a5a609f640 schema:name dimensions_id
43 schema:value pub.1045090023
44 rdf:type schema:PropertyValue
45 N85203ba88d1346de9a5f68cf85c9bca9 schema:name doi
46 schema:value 10.1134/s1063783414040349
47 rdf:type schema:PropertyValue
48 N9743c98d9a9148b293e21b2bb253378d schema:name Springer Nature - SN SciGraph project
49 rdf:type schema:Organization
50 Nd7aa02e899284d2ba63d41a9cab07c11 schema:name readcube_id
51 schema:value d6c7380754cf1d98c46511f64ad1c5a5fe61b586d29da4ff834bea865b5305c6
52 rdf:type schema:PropertyValue
53 Nf5a1b7d7531b4f2ea5c4a1475223b998 rdf:first sg:person.014263047335.51
54 rdf:rest N35da53ed22aa4b5fa7d5095aacbd850a
55 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
56 schema:name Engineering
57 rdf:type schema:DefinedTerm
58 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
59 schema:name Materials Engineering
60 rdf:type schema:DefinedTerm
61 sg:journal.1136591 schema:issn 0367-3294
62 1063-7834
63 schema:name Physics of the Solid State
64 rdf:type schema:Periodical
65 sg:person.012610623437.11 schema:affiliation https://www.grid.ac/institutes/grid.35915.3b
66 schema:familyName Gladskikh
67 schema:givenName I. A.
68 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012610623437.11
69 rdf:type schema:Person
70 sg:person.014263047335.51 schema:affiliation https://www.grid.ac/institutes/grid.35915.3b
71 schema:familyName Vartanyan
72 schema:givenName T. A.
73 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014263047335.51
74 rdf:type schema:Person
75 sg:person.014700773264.74 schema:affiliation https://www.grid.ac/institutes/grid.35915.3b
76 schema:familyName Leonov
77 schema:givenName N. B.
78 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014700773264.74
79 rdf:type schema:Person
80 sg:person.016263356305.04 schema:affiliation https://www.grid.ac/institutes/grid.35915.3b
81 schema:familyName Przhibel’skii
82 schema:givenName S. G.
83 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016263356305.04
84 rdf:type schema:Person
85 https://doi.org/10.1063/1.1622990 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057726880
86 rdf:type schema:CreativeWork
87 https://doi.org/10.1063/1.1722742 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057789717
88 rdf:type schema:CreativeWork
89 https://doi.org/10.1103/physrevb.47.13782 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060565246
90 rdf:type schema:CreativeWork
91 https://doi.org/10.1103/physrevb.78.155131 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060626357
92 rdf:type schema:CreativeWork
93 https://doi.org/10.1103/physrevlett.49.1444 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060787672
94 rdf:type schema:CreativeWork
95 https://www.grid.ac/institutes/grid.35915.3b schema:alternateName ITMO University
96 schema:name St. Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverkskiy pr. 49, 197101, St. Petersburg, Russia
97 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...